TY - JOUR
T1 - Improving simultaneous of crystallization and Ga homogenization in Cu(In,Ga)Se2 film using an evaporated in film
AU - Lin, Yi Cheng
AU - Yao, Xu Jing
AU - Wang, Li Ching
AU - Ting, Jyh-Ming
PY - 2013/9/25
Y1 - 2013/9/25
N2 - We report an improving simultaneous of crystallization and Ga homogenization method of Cu(In,Ga)Se2(CIGS) layer by evaporated In film in cell structure of glass/Mo/Cu-In-Ga/CdS/i-ZnO/AZO/Al. Results demonstrate that the evaporated In structure is superior to conventional sputtered In structure for its ability to produce a CIGS film with better crystallization, superior structural characteristics, reduced surface roughness, and more homogeneous distribution of elemental Ga. The device conversion efficiency using the evaporated In structure was found to increase by about 29% from 6.0% to 8.5% beyond what is possible using conventional sputtering In structure.
AB - We report an improving simultaneous of crystallization and Ga homogenization method of Cu(In,Ga)Se2(CIGS) layer by evaporated In film in cell structure of glass/Mo/Cu-In-Ga/CdS/i-ZnO/AZO/Al. Results demonstrate that the evaporated In structure is superior to conventional sputtered In structure for its ability to produce a CIGS film with better crystallization, superior structural characteristics, reduced surface roughness, and more homogeneous distribution of elemental Ga. The device conversion efficiency using the evaporated In structure was found to increase by about 29% from 6.0% to 8.5% beyond what is possible using conventional sputtering In structure.
UR - http://www.scopus.com/inward/record.url?scp=84878107379&partnerID=8YFLogxK
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U2 - 10.1016/j.jallcom.2013.03.257
DO - 10.1016/j.jallcom.2013.03.257
M3 - Article
AN - SCOPUS:84878107379
VL - 572
SP - 31
EP - 36
JO - Journal of the Less-Common Metals
JF - Journal of the Less-Common Metals
SN - 0925-8388
ER -