Improving the electrical and hysteresis performance of amorphous igzo thin-film transistors using co-sputtered zirconium silicon oxide gate dielectrics

Chien Hsiung Hung, Shui Jinn Wang, Pang Yi Liu, Chien Hung Wu, Hao Ping Yan, Nai Sheng Wu, Tseng Hsing Lin

研究成果: Article同行評審

9 引文 斯高帕斯(Scopus)

摘要

The use of co-sputtered Zirconium Silicon Oxide (ZrxSi1−xO2) gate dielectrics to improve the performance of α-IGZO TFT is demonstrated. Through modulating the sputtering power of the SiO2 and ZrO2 targets, the control of dielectric constant in a range of 6.9–31.6 is shown. Prevention of polycrystalline formation of the ZrxSi1−xO2 film up to 600 °C annealing and its effectiveness in reducing leakage currents and interface trap density are presented. Moreover, it is revealed that the Zr0.85Si0.15O2 dielectric could lead to significantly improved TFT performance in terms of subthreshold swing (SS=81 mV/dec), field-effect mobility (μFE=51.7 cm2/Vs), and threshold voltage shift (ΔVTH=0.03 V).

原文English
頁(從 - 到)84-91
頁數8
期刊Materials Science in Semiconductor Processing
67
DOIs
出版狀態Published - 2017 8月 15

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)
  • 凝聚態物理學
  • 材料力學
  • 機械工業

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