Improving the thermoelectric performance of metastable rock-salt GeTe-rich Ge–Sb–Te thin films through tuning of grain orientation and vacancies

I. Nan Chen, Cheong Wei Chong, Deniz P. Wong, Liang Ming Lyu, Wei Lun Chien, Ramakrishnan Anbalagan, Masoud Aminzare, Yang Fang Chen, Li Chyong Chen, Kuei Hsien Chen

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

Phase-change memory materials such as the pseudobinary GeTe-Sb2Te3 compounds have recently gained attention for their good thermoelectric properties, which can be used for power-generation/cooling applications. In this work, GeTe-rich Ge–Sb–Te thin films deposited using a radio-frequency magnetron sputtering method readily exhibit the metastable face-centered cubic (FCC) phase at room temperature. This is in stark contrast to its bulk form, which only transforms to its FCC phase after a transition temperature of around 350 °C. Based on previous works, the FCC phase contributes to the superior thermoelectric properties of this material system. In this study, by decreasing the working deposition pressure, the preferred orientation of (200) plane is observed that translates to improved carrier mobility. Moreover, increasing the annealing temperature has been shown to decrease the carrier concentration due to Te deficiency, leading to a significant improvement in the Seebeck coefficient of the film. By combining these effects, an optimized thermoelectric power factor (21 μW/cm K2) was obtained at an operating temperature of 350 °C.

原文English
頁(從 - 到)3122-3129
頁數8
期刊Physica Status Solidi (A) Applications and Materials Science
213
發行號12
DOIs
出版狀態Published - 2016 十二月 1

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 表面和介面
  • 表面、塗料和薄膜
  • 電氣與電子工程
  • 材料化學

指紋

深入研究「Improving the thermoelectric performance of metastable rock-salt GeTe-rich Ge–Sb–Te thin films through tuning of grain orientation and vacancies」主題。共同形成了獨特的指紋。

引用此