Impurity and temperature enhanced growth behaviour of anodic aluminium oxide from AA5052 Al-Mg alloy using hybrid pulse anodization at room temperature

Chen-Kuei Chung, C. H. Tsai, C. R. Hsu, E. H. Kuo, Y. Chen, I. C. Chung

研究成果: Article同行評審

14 引文 斯高帕斯(Scopus)

摘要

Conventional anodic aluminium oxide (AAO) was formed using direct-current anodization from high-purity (99.99%–99.999%) Al foils at low 0–5 °C with a growth rate about 2–3 μm/h. Here, we investigate the greatly enhanced growth behaviour of AAO from AA5052 Al-Mg alloy (96.6%Al-2.6%Mg) at high 25 °C using hybrid-pulse anodization. The Mg-impurity and high-temperature enhanced growth rate of AAO at 25 °C is over three-fold to 9.7 μm/h; it also reduces the average pore size to 32.2 nm from 42.8 nm due to high-activity Mg hydrolysis releasing high Mg(OH)2-formation heat and H2 gas. The unique property of AAO from AA5052 is discussed.

原文English
頁(從 - 到)40-47
頁數8
期刊Corrosion Science
125
DOIs
出版狀態Published - 2017 八月 15

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Science(all)

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