In situ memory characteristics of thermal disturbance in low-voltage organic field-effect transistors

Wei Yang Chou, Sheng Kuang Peng, Hsin Hsiu Lin, Horng Long Cheng

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

Low-voltage organic memory transistors (LOMTs) in situ operation from 25 °C to 100 °C were studied. The interface between charge trapping and active layers exhibited a correlation between the performances of LOMTs and the temperature of environment. Effective microstructures and interface properties need to be investigated to understand the physical mechanisms of the LOMTs in situ operation at various temperatures. When the temperature increased, the thermal disturbance fluctuated the channel, leading to the variety of memory characteristics for the LOMTs. The memory window of LOMTs can reach 1.87 V at 25 °C and maintain most memory stability below 40 °C.

原文English
文章編號110628
期刊Journal of Physics and Chemistry of Solids
164
DOIs
出版狀態Published - 2022 5月

All Science Journal Classification (ASJC) codes

  • 一般化學
  • 一般材料科學
  • 凝聚態物理學

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