Low-voltage organic memory transistors (LOMTs) in situ operation from 25 °C to 100 °C were studied. The interface between charge trapping and active layers exhibited a correlation between the performances of LOMTs and the temperature of environment. Effective microstructures and interface properties need to be investigated to understand the physical mechanisms of the LOMTs in situ operation at various temperatures. When the temperature increased, the thermal disturbance fluctuated the channel, leading to the variety of memory characteristics for the LOMTs. The memory window of LOMTs can reach 1.87 V at 25 °C and maintain most memory stability below 40 °C.
All Science Journal Classification (ASJC) codes
- 化學 (全部)