In-situ post-annealing technique for improving piezoelectricity and ferroelectricity of Li-doped ZnO thin films prepared by radio frequency magnetron sputtering system

Chun Cheng Lin; Chia Chiang Chang; Chin Jyi Wu; Zong Liang Tseng; Jian Fu Tang; Sheng Yuan Chu; Yi Chun Chen; Xiaoding Qi

doi:10.1063/1.4795525

In-situ post-annealing technique for improving piezoelectricity and ferroelectricity of Li-doped ZnO thin films prepared by radio frequency magnetron sputtering system

Chun Cheng Lin, Chia Chiang Chang, Chin Jyi Wu, Zong Liang Tseng, Jian Fu Tang, Sheng Yuan Chu, Yi Chun Chen, Xiaoding Qi

研究成果: Article › 同行評審

13 引文斯高帕斯（Scopus）

摘要

Li-doped zinc oxide (L_0.03Z_0.97O) thin films are deposited onto Pt/Ti/SiO₂/Si substrates via the radio frequency magnetron sputtering method. The structure evolution with annealing temperature of the predominantly (002)-oriented Li-doped ZnO (LZO) films after in-situ post-annealing process is determined. The largest values of the piezoelectric coefficient (d₃₃) and the remnant polarization (P_r) (22.85 pm/V and 0.655 μC/cm², respectively) are obtained for LZO films post-annealed at 600 °C, which can be attributed to the predominant (002)-oriented crystalline structure, the release of intrinsic residual compressive stress, and less non-lattice oxygen.

原文	English
文章編號	102107
期刊	Applied Physics Letters
卷	102
發行號	10
DOIs	https://doi.org/10.1063/1.4795525
出版狀態	Published - 2013 3月 11

All Science Journal Classification (ASJC) codes

物理與天文學（雜項）

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10.1063/1.4795525

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title = "In-situ post-annealing technique for improving piezoelectricity and ferroelectricity of Li-doped ZnO thin films prepared by radio frequency magnetron sputtering system",

abstract = "Li-doped zinc oxide (L0.03Z0.97O) thin films are deposited onto Pt/Ti/SiO2/Si substrates via the radio frequency magnetron sputtering method. The structure evolution with annealing temperature of the predominantly (002)-oriented Li-doped ZnO (LZO) films after in-situ post-annealing process is determined. The largest values of the piezoelectric coefficient (d33) and the remnant polarization (Pr) (22.85 pm/V and 0.655 μC/cm2, respectively) are obtained for LZO films post-annealed at 600 °C, which can be attributed to the predominant (002)-oriented crystalline structure, the release of intrinsic residual compressive stress, and less non-lattice oxygen.",

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AU - Lin, Chun Cheng

AU - Chang, Chia Chiang

AU - Wu, Chin Jyi

AU - Tseng, Zong Liang

AU - Tang, Jian Fu

AU - Chu, Sheng Yuan

AU - Chen, Yi Chun

AU - Qi, Xiaoding

PY - 2013/3/11

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In-situ post-annealing technique for improving piezoelectricity and ferroelectricity of Li-doped ZnO thin films prepared by radio frequency magnetron sputtering system

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