In Situ Synchrotron X-ray Diffraction Measurement of the Strain Distribution in Si Die for the Embedded Substrates

Hsueh Hsien Hsu, Hao Chen, Yao Tsung Ouyang, Tz Cheng Chiu, Tao Chih Chang, Hsin Yi Lee, Chin Shun Ku, Albert T. Wu

研究成果: Article同行評審

摘要

Three-dimensional packaging provides an acceptable solution for miniaturized integrated circuits. Because of the technological flexibility required for combining various modules to form a functional system, miniaturization can be achieved by using embedded techniques that could enhance the reliability of assembled systems. Because the mismatch of the thermal expansion coefficient among the materials has been an emerging issue when embedded components are subjected to thermal cycles, this study adopted the in situ synchrotron x-ray method to measure the strain distribution of a Si die in embedded substrates at various temperatures ranging from 25°C to 150°C. The out-of-plane strain of the Si die became less compressive when the temperature was increased. The numerical simulation of the finite elements software ANSYS also indicated the similar consequence of the strain behavior.

原文English
頁(從 - 到)3942-3947
頁數6
期刊Journal of Electronic Materials
44
發行號10
DOIs
出版狀態Published - 2015 10月 5

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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