In-situ Transmission Electron Microscope Investigation of Atomic-scale Titanium Silicide Monolayer Superlattice

Hsin Mei Lu; Chih Yang Huang; Guan Ming Huang; Kuo Chang Lu; Wen Wei Wu

doi:10.1016/j.scriptamat.2020.10.029

In-situ Transmission Electron Microscope Investigation of Atomic-scale Titanium Silicide Monolayer Superlattice

Hsin Mei Lu, Chih Yang Huang, Guan Ming Huang, Kuo Chang Lu, Wen Wei Wu

研究成果: Article › 同行評審

摘要

In this work, the titanium germanosilicide (TiSiGe_x) superlattice (SL) has been successfully fabricated. A monolayer of silicon atoms and bilayer of inversed titanium silicide constructed this novel superlattice periodically. A localized strain field has been found as a crucial factor via high resolution Annular Dark Field Scanning Transmission Electron Microscope (ADF-STEM) images, being generated by gradual segregation of germanium atoms. Germanium atoms would be excluded during the formation of the transition silicide. This phenomenon could be interpreted by thermodynamic preference. There was a substitution reaction between silicon and germanium, resulting from similar atomic volumes of both. In other words, germanium segregation pathway was based on where substitution occurred. Eventually, the excluded germanium atoms tended to accumulate at the boundary of TiSiGe_x-SL, contributing to a discontinuous thin film layer.

原文	English
頁（從 - 到）	6-11
頁數	6
期刊	Scripta Materialia
卷	193
DOIs	https://doi.org/10.1016/j.scriptamat.2020.10.029
出版狀態	Published - 2021 三月 1

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys

存取文件

10.1016/j.scriptamat.2020.10.029

其它文件與鏈接

指紋深入研究「In-situ Transmission Electron Microscope Investigation of Atomic-scale Titanium Silicide Monolayer Superlattice」主題。共同形成了獨特的指紋。

引用此

@article{a2aaf0f916b4491db3d7739eb3cfbcff,

title = "In-situ Transmission Electron Microscope Investigation of Atomic-scale Titanium Silicide Monolayer Superlattice",

abstract = "In this work, the titanium germanosilicide (TiSiGex) superlattice (SL) has been successfully fabricated. A monolayer of silicon atoms and bilayer of inversed titanium silicide constructed this novel superlattice periodically. A localized strain field has been found as a crucial factor via high resolution Annular Dark Field Scanning Transmission Electron Microscope (ADF-STEM) images, being generated by gradual segregation of germanium atoms. Germanium atoms would be excluded during the formation of the transition silicide. This phenomenon could be interpreted by thermodynamic preference. There was a substitution reaction between silicon and germanium, resulting from similar atomic volumes of both. In other words, germanium segregation pathway was based on where substitution occurred. Eventually, the excluded germanium atoms tended to accumulate at the boundary of TiSiGex-SL, contributing to a discontinuous thin film layer.",

author = "Lu, {Hsin Mei} and Huang, {Chih Yang} and Huang, {Guan Ming} and Lu, {Kuo Chang} and Wu, {Wen Wei}",

note = "Funding Information: The authors acknowledge the support from the Ministry of Science and Technology (MOST) in Taiwan (MOST 108-2221-E-009-036-MY3, MOST 108-2221-E-006-139 -MY3, MOST 106-2628-E-009-002-MY3 and MOST 106-2119-M-009-008). This work was financially supported by the “Center for Semiconductor Technology Research at National Chiao Tung University” and the “Frontier Research Center on Fundamental and Applied Sciences of Matters at National Tsing Hua University” from the Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education (MOE) in Taiwan. It was also supported in part by the Ministry of Science and Technology, Taiwan, under Grant MOST-109-2634-F-009-029. Publisher Copyright: {\textcopyright} 2020",

year = "2021",

month = mar,

day = "1",

doi = "10.1016/j.scriptamat.2020.10.029",

language = "English",

volume = "193",

pages = "6--11",

journal = "Scripta Materialia",

issn = "1359-6462",

publisher = "Elsevier Limited",

}

TY - JOUR

T1 - In-situ Transmission Electron Microscope Investigation of Atomic-scale Titanium Silicide Monolayer Superlattice

AU - Lu, Hsin Mei

AU - Huang, Chih Yang

AU - Huang, Guan Ming

AU - Lu, Kuo Chang

AU - Wu, Wen Wei

N1 - Funding Information: The authors acknowledge the support from the Ministry of Science and Technology (MOST) in Taiwan (MOST 108-2221-E-009-036-MY3, MOST 108-2221-E-006-139 -MY3, MOST 106-2628-E-009-002-MY3 and MOST 106-2119-M-009-008). This work was financially supported by the “Center for Semiconductor Technology Research at National Chiao Tung University” and the “Frontier Research Center on Fundamental and Applied Sciences of Matters at National Tsing Hua University” from the Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education (MOE) in Taiwan. It was also supported in part by the Ministry of Science and Technology, Taiwan, under Grant MOST-109-2634-F-009-029. Publisher Copyright: © 2020

PY - 2021/3/1

Y1 - 2021/3/1

N2 - In this work, the titanium germanosilicide (TiSiGex) superlattice (SL) has been successfully fabricated. A monolayer of silicon atoms and bilayer of inversed titanium silicide constructed this novel superlattice periodically. A localized strain field has been found as a crucial factor via high resolution Annular Dark Field Scanning Transmission Electron Microscope (ADF-STEM) images, being generated by gradual segregation of germanium atoms. Germanium atoms would be excluded during the formation of the transition silicide. This phenomenon could be interpreted by thermodynamic preference. There was a substitution reaction between silicon and germanium, resulting from similar atomic volumes of both. In other words, germanium segregation pathway was based on where substitution occurred. Eventually, the excluded germanium atoms tended to accumulate at the boundary of TiSiGex-SL, contributing to a discontinuous thin film layer.

AB - In this work, the titanium germanosilicide (TiSiGex) superlattice (SL) has been successfully fabricated. A monolayer of silicon atoms and bilayer of inversed titanium silicide constructed this novel superlattice periodically. A localized strain field has been found as a crucial factor via high resolution Annular Dark Field Scanning Transmission Electron Microscope (ADF-STEM) images, being generated by gradual segregation of germanium atoms. Germanium atoms would be excluded during the formation of the transition silicide. This phenomenon could be interpreted by thermodynamic preference. There was a substitution reaction between silicon and germanium, resulting from similar atomic volumes of both. In other words, germanium segregation pathway was based on where substitution occurred. Eventually, the excluded germanium atoms tended to accumulate at the boundary of TiSiGex-SL, contributing to a discontinuous thin film layer.

UR - http://www.scopus.com/inward/record.url?scp=85093702113&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85093702113&partnerID=8YFLogxK

U2 - 10.1016/j.scriptamat.2020.10.029

DO - 10.1016/j.scriptamat.2020.10.029

M3 - Article

AN - SCOPUS:85093702113

VL - 193

SP - 6

EP - 11

JO - Scripta Materialia

JF - Scripta Materialia

SN - 1359-6462

ER -