High-linearity In0.52Al0.48As/In 0.53Ga0.47As doped channel transistor (DCFET) was successfully fabricated by low-pressure metal organic chemical vapor deposition (LP-MOCVD). Due to the presence of doped InGaAs channel, undoped InAlAs barrier layer and low-temperature growth InAlAs buffer layer, good carrier confinement, improved breakdown and a wide transconductance operation regime are expected. Experimentally, for a 1.5 × 100 μm2 device, high-transconductance of 291mS/mm, high-gate-drain breakdown voltage of 20.2V, high-turn-on voltage of 0.78V, wide operation regime of 288mA/mm as well as significantly improved gate voltage swing of 1.05 V are achieved. Additionally, the studied device shows good temperature characteristics. The performance indicates the promise for high-power and high-temperature applications.
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