InAlAs/InGaAs doped channel heterostructure for high-linearity, high-temperature and high-breakdown operations

Yeong Jia Chen, Wei Chou Hsu, Yen Wei Chen, Yu Shyan Lin, Rong Tay Hsu, Yue Huei Wu

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)

摘要

High-linearity In0.52Al0.48As/In 0.53Ga0.47As doped channel transistor (DCFET) was successfully fabricated by low-pressure metal organic chemical vapor deposition (LP-MOCVD). Due to the presence of doped InGaAs channel, undoped InAlAs barrier layer and low-temperature growth InAlAs buffer layer, good carrier confinement, improved breakdown and a wide transconductance operation regime are expected. Experimentally, for a 1.5 × 100 μm2 device, high-transconductance of 291mS/mm, high-gate-drain breakdown voltage of 20.2V, high-turn-on voltage of 0.78V, wide operation regime of 288mA/mm as well as significantly improved gate voltage swing of 1.05 V are achieved. Additionally, the studied device shows good temperature characteristics. The performance indicates the promise for high-power and high-temperature applications.

原文English
頁(從 - 到)163-166
頁數4
期刊Solid-State Electronics
49
發行號2
DOIs
出版狀態Published - 2005 二月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

指紋

深入研究「InAlAs/InGaAs doped channel heterostructure for high-linearity, high-temperature and high-breakdown operations」主題。共同形成了獨特的指紋。

引用此