InAlAs/InGaAs metamorphic high electron mobility transistor with a liquid phase oxidized InAlAs as gate dielectric

Kai Lin Lee, Kuan Wei Lee, Men Hsi Tsai, Po Wen Sze, Mau Phon Houng, Yeong Her Wang

研究成果: Conference contribution

摘要

The In0.52Al0.48As/In0.53Ga 0.47As metal-oxide-semiconductor metamorphic high electron mobility transistors (MOS-MHEMTs) with a thin InAlAs native oxide layer are demonstrated. After highly selective gate recessing of InGaAs/InAlAs using citric buffer etchant, the gate dielectric is obtained directly by oxidizing InAlAs layer in a liquid phase solution near room temperature. As compared to its counterpart MHEMT, the fabricated InAlAs/InGaAs MOS-MHEMT exhibits larger gate swing voltage, higher drain-to-source breakdown voltage, and at least 1000% improvement in gate leakage current with the effectively suppressed impact ionization effect.

原文English
主出版物標題2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
發行者Institute of Electrical and Electronics Engineers Inc.
頁面613-616
頁數4
ISBN(列印)0780393392, 9780780393394
DOIs
出版狀態Published - 2005 一月 1
事件2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC - Howloon, Hong Kong
持續時間: 2005 十二月 192005 十二月 21

出版系列

名字2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

Other

Other2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
國家Hong Kong
城市Howloon
期間05-12-1905-12-21

    指紋

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

引用此

Lee, K. L., Lee, K. W., Tsai, M. H., Sze, P. W., Houng, M. P., & Wang, Y. H. (2005). InAlAs/InGaAs metamorphic high electron mobility transistor with a liquid phase oxidized InAlAs as gate dielectric. 於 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC (頁 613-616). [1635348] (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2005.1635348