InAlAs/InGaAs metamorphic high electron mobility transistor with a liquid phase oxidized InAlAs as gate dielectric

Kai Lin Lee, Kuan Wei Lee, Men Hsi Tsai, Po Wen Sze, Mau Phon Houng, Yeong Her Wang

研究成果: Conference contribution

1 引文 (Scopus)

摘要

The In0.52Al0.48As/In0.53Ga 0.47As metal-oxide-semiconductor metamorphic high electron mobility transistors (MOS-MHEMTs) with a thin InAlAs native oxide layer are demonstrated. After highly selective gate recessing of InGaAs/InAlAs using citric buffer etchant, the gate dielectric is obtained directly by oxidizing InAlAs layer in a liquid phase solution near room temperature. As compared to its counterpart MHEMT, the fabricated InAlAs/InGaAs MOS-MHEMT exhibits larger gate swing voltage, higher drain-to-source breakdown voltage, and at least 1000% improvement in gate leakage current with the effectively suppressed impact ionization effect.

原文English
主出版物標題2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
發行者Institute of Electrical and Electronics Engineers Inc.
頁面613-616
頁數4
ISBN(列印)0780393392, 9780780393394
DOIs
出版狀態Published - 2005 一月 1
事件2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC - Howloon, Hong Kong
持續時間: 2005 十二月 192005 十二月 21

出版系列

名字2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

Other

Other2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
國家Hong Kong
城市Howloon
期間05-12-1905-12-21

指紋

Gate dielectrics
High electron mobility transistors
Metals
Impact ionization
Liquids
Electric breakdown
Leakage currents
Oxides
Buffers
Electric potential
Temperature
Oxide semiconductors

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

引用此文

Lee, K. L., Lee, K. W., Tsai, M. H., Sze, P. W., Houng, M. P., & Wang, Y. H. (2005). InAlAs/InGaAs metamorphic high electron mobility transistor with a liquid phase oxidized InAlAs as gate dielectric. 於 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC (頁 613-616). [1635348] (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2005.1635348
Lee, Kai Lin ; Lee, Kuan Wei ; Tsai, Men Hsi ; Sze, Po Wen ; Houng, Mau Phon ; Wang, Yeong Her. / InAlAs/InGaAs metamorphic high electron mobility transistor with a liquid phase oxidized InAlAs as gate dielectric. 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC. Institute of Electrical and Electronics Engineers Inc., 2005. 頁 613-616 (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC).
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title = "InAlAs/InGaAs metamorphic high electron mobility transistor with a liquid phase oxidized InAlAs as gate dielectric",
abstract = "The In0.52Al0.48As/In0.53Ga 0.47As metal-oxide-semiconductor metamorphic high electron mobility transistors (MOS-MHEMTs) with a thin InAlAs native oxide layer are demonstrated. After highly selective gate recessing of InGaAs/InAlAs using citric buffer etchant, the gate dielectric is obtained directly by oxidizing InAlAs layer in a liquid phase solution near room temperature. As compared to its counterpart MHEMT, the fabricated InAlAs/InGaAs MOS-MHEMT exhibits larger gate swing voltage, higher drain-to-source breakdown voltage, and at least 1000{\%} improvement in gate leakage current with the effectively suppressed impact ionization effect.",
author = "Lee, {Kai Lin} and Lee, {Kuan Wei} and Tsai, {Men Hsi} and Sze, {Po Wen} and Houng, {Mau Phon} and Wang, {Yeong Her}",
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Lee, KL, Lee, KW, Tsai, MH, Sze, PW, Houng, MP & Wang, YH 2005, InAlAs/InGaAs metamorphic high electron mobility transistor with a liquid phase oxidized InAlAs as gate dielectric. 於 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC., 1635348, 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC, Institute of Electrical and Electronics Engineers Inc., 頁 613-616, 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC, Howloon, Hong Kong, 05-12-19. https://doi.org/10.1109/EDSSC.2005.1635348

InAlAs/InGaAs metamorphic high electron mobility transistor with a liquid phase oxidized InAlAs as gate dielectric. / Lee, Kai Lin; Lee, Kuan Wei; Tsai, Men Hsi; Sze, Po Wen; Houng, Mau Phon; Wang, Yeong Her.

2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC. Institute of Electrical and Electronics Engineers Inc., 2005. p. 613-616 1635348 (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC).

研究成果: Conference contribution

TY - GEN

T1 - InAlAs/InGaAs metamorphic high electron mobility transistor with a liquid phase oxidized InAlAs as gate dielectric

AU - Lee, Kai Lin

AU - Lee, Kuan Wei

AU - Tsai, Men Hsi

AU - Sze, Po Wen

AU - Houng, Mau Phon

AU - Wang, Yeong Her

PY - 2005/1/1

Y1 - 2005/1/1

N2 - The In0.52Al0.48As/In0.53Ga 0.47As metal-oxide-semiconductor metamorphic high electron mobility transistors (MOS-MHEMTs) with a thin InAlAs native oxide layer are demonstrated. After highly selective gate recessing of InGaAs/InAlAs using citric buffer etchant, the gate dielectric is obtained directly by oxidizing InAlAs layer in a liquid phase solution near room temperature. As compared to its counterpart MHEMT, the fabricated InAlAs/InGaAs MOS-MHEMT exhibits larger gate swing voltage, higher drain-to-source breakdown voltage, and at least 1000% improvement in gate leakage current with the effectively suppressed impact ionization effect.

AB - The In0.52Al0.48As/In0.53Ga 0.47As metal-oxide-semiconductor metamorphic high electron mobility transistors (MOS-MHEMTs) with a thin InAlAs native oxide layer are demonstrated. After highly selective gate recessing of InGaAs/InAlAs using citric buffer etchant, the gate dielectric is obtained directly by oxidizing InAlAs layer in a liquid phase solution near room temperature. As compared to its counterpart MHEMT, the fabricated InAlAs/InGaAs MOS-MHEMT exhibits larger gate swing voltage, higher drain-to-source breakdown voltage, and at least 1000% improvement in gate leakage current with the effectively suppressed impact ionization effect.

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M3 - Conference contribution

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SN - 0780393392

SN - 9780780393394

T3 - 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

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BT - 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

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Lee KL, Lee KW, Tsai MH, Sze PW, Houng MP, Wang YH. InAlAs/InGaAs metamorphic high electron mobility transistor with a liquid phase oxidized InAlAs as gate dielectric. 於 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC. Institute of Electrical and Electronics Engineers Inc. 2005. p. 613-616. 1635348. (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC). https://doi.org/10.1109/EDSSC.2005.1635348