InAs quantum dot growth by APMOCVD

T. S. Yeoh, R. B. Swint, J. J. Coleman, C. P. Liu

研究成果: Conference article同行評審

1 引文 斯高帕斯(Scopus)

摘要

In this study, 5 nm coherent islands approx. 3.5×1010 cm-2 were successfully grown using APMOCVD at 450°C. Incoherent islands >10 nm occurred possibly due to the low activation energy of dislocated cluster formation at 450°C.

原文English
頁(從 - 到)31-32
頁數2
期刊LEOS Summer Topical Meeting
出版狀態Published - 1999 1月 1
事件Proceedings of the 1999 IEEE/LEOS Summer Topical Meeting on Nanostructures and Quantum Dots - San Diego, CA, USA
持續時間: 1999 7月 261999 7月 27

All Science Journal Classification (ASJC) codes

  • 原子與分子物理與光學
  • 電氣與電子工程

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