TY - GEN
T1 - Independently controlled etching and growth of graphene quantum dots and their SERS applications
AU - Chen, Ying Ren
AU - Chung, Cheng Lung
AU - Chen, Gideon
AU - Tzeng, Yonhua
N1 - Funding Information:
Research supported by the Ministry of Science and Technology, Taiwan under the grants #103-2221-E-006-125-MY3, #104-2218-E-006-003-, #105-2911-I-006-513-, and #105-2918-I-006-007- and the Ministry of Education under a special grant for advancing towards a world class university.
Publisher Copyright:
© 2016 IEEE.
PY - 2016/11/21
Y1 - 2016/11/21
N2 - We report the fabrication of graphene quantum dots on Cu substrates by thermal CVD. The synthesized high-density graphene quantum dots exhibit strong surface enhanced Raman scattering (SERS) effects. The nanoscale distance of 30∼50nm between neighboring quantum dots combined with quantum dots to form nanostructures favorable for plasmonic coupling enhanced high local electric fields, which lead to greatly enhanced strength of signal from Raman scattering of molecules on the substrate as an effective means of detecting, identifying, and measuring low concentration molecules of scientific and technological significance.
AB - We report the fabrication of graphene quantum dots on Cu substrates by thermal CVD. The synthesized high-density graphene quantum dots exhibit strong surface enhanced Raman scattering (SERS) effects. The nanoscale distance of 30∼50nm between neighboring quantum dots combined with quantum dots to form nanostructures favorable for plasmonic coupling enhanced high local electric fields, which lead to greatly enhanced strength of signal from Raman scattering of molecules on the substrate as an effective means of detecting, identifying, and measuring low concentration molecules of scientific and technological significance.
UR - http://www.scopus.com/inward/record.url?scp=85006957571&partnerID=8YFLogxK
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U2 - 10.1109/NANO.2016.7751493
DO - 10.1109/NANO.2016.7751493
M3 - Conference contribution
AN - SCOPUS:85006957571
T3 - 16th International Conference on Nanotechnology - IEEE NANO 2016
SP - 759
EP - 762
BT - 16th International Conference on Nanotechnology - IEEE NANO 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
Y2 - 22 August 2016 through 25 August 2016
ER -