Indium Aluminum Zinc Oxide Phototransistor with HfO2 Dielectric Layer through Atomic Layer Deposition

T. H. Cheng, S. P. Chang, Y. C. Cheng, S. J. Chang

研究成果: Article

摘要

Bottom-gate indium aluminum zinc oxide thin-film transistors (TFTs) are fabricated with a HfO2 dielectric layer using plasma enhanced atomic layer deposition (PEALD). The electrical properties and photoresponse are both affected by the method of post annealing. A device that is annealed at a temperature of less than 200°C has a better Ion/Ioff of 71\times 10^{{8}}$ and a lower subthreshold swing (S.S.) of only 0.21 V/dec. This demonstrates that proper annealing treatment increases the performance of the device. The photoresponse is also calculated. A TFT that is not annealed has a poor photoresponse and a lower rejection ratio. Annealing at a temperature of less than 200 °C gives a good photoresponse of 0.2 A/W and a high rejection ratio of .86\times 10^{{5}}$. An IAZO TFT with a HfO2 dielectric layer that is deposited using PEALD is applicable in UV sensing technology.

原文English
文章編號8884100
頁(從 - 到)1838-1842
頁數5
期刊IEEE Sensors Journal
20
發行號4
DOIs
出版狀態Published - 2020 二月 15

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Electrical and Electronic Engineering

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