Indium Aluminum Zinc Oxide Thin Film Transistor With Al2O3 Dielectric for UV Sensing

Tien Hung Cheng, Sheng Po Chang, Yen Chi Cheng, Shoou Jinn Chang

研究成果: Article

摘要

Two bottom-gate indium aluminum zinc oxide thin-film transistors (TFTs) were fabricated with different dielectric layers. The TFT with Al2O3 deposited through atomic layer deposition (ALD) had higher field mobility of 0.48 cm 2 V, Ion/Ioff of 9.7 × 107, and lower subthreshold swing of 0.3 V/dec. The hysteresis of the two devices showed that the device with Al2O3 dielectric layer had a lower threshold voltage shift (-0.065 V) compared with that of the device with the SiO2 dielectric layer (-0.352 V). These results revealed that the device with Al2O3 dielectric layer had fewer interface traps between the active layer and dielectric layer than the device with the SiO2 dielectric layer deposited through plasma-enhanced chemical vapor deposition. Because of the improvement of interface traps, the device with Al2O3 dielectric layer had high responsivity (6.18 A/W) and rejection ratio (1.74 × 103); this device has high potential for use in ultraviolet sensing applications.

原文English
文章編號8707004
頁(從 - 到)1005-1008
頁數4
期刊IEEE Photonics Technology Letters
31
發行號13
DOIs
出版狀態Published - 2019 七月 1

指紋

Zinc Oxide
Indium
Thin film transistors
Zinc oxide
Aluminum
zinc oxides
Oxide films
indium
transistors
aluminum oxides
thin films
traps
Atomic layer deposition
Plasma enhanced chemical vapor deposition
Threshold voltage
atomic layer epitaxy
Hysteresis
rejection
threshold voltage
low voltage

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

引用此文

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abstract = "Two bottom-gate indium aluminum zinc oxide thin-film transistors (TFTs) were fabricated with different dielectric layers. The TFT with Al2O3 deposited through atomic layer deposition (ALD) had higher field mobility of 0.48 cm 2 V, Ion/Ioff of 9.7 × 107, and lower subthreshold swing of 0.3 V/dec. The hysteresis of the two devices showed that the device with Al2O3 dielectric layer had a lower threshold voltage shift (-0.065 V) compared with that of the device with the SiO2 dielectric layer (-0.352 V). These results revealed that the device with Al2O3 dielectric layer had fewer interface traps between the active layer and dielectric layer than the device with the SiO2 dielectric layer deposited through plasma-enhanced chemical vapor deposition. Because of the improvement of interface traps, the device with Al2O3 dielectric layer had high responsivity (6.18 A/W) and rejection ratio (1.74 × 103); this device has high potential for use in ultraviolet sensing applications.",
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Indium Aluminum Zinc Oxide Thin Film Transistor With Al2O3 Dielectric for UV Sensing. / Cheng, Tien Hung; Chang, Sheng Po; Cheng, Yen Chi; Chang, Shoou Jinn.

於: IEEE Photonics Technology Letters, 卷 31, 編號 13, 8707004, 01.07.2019, p. 1005-1008.

研究成果: Article

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