Indium-diffused ZnO nanowires synthesized on ITO-buffered Si substrate

Cheng Liang Hsu; Shoou Jinn Chang; Yan Ru Lin; Jyh Ming Wu; Tzer Shen Lin; Song Yeu Tsai; I. Cherng Chen

doi:10.1088/0957-4484/17/2/029

Indium-diffused ZnO nanowires synthesized on ITO-buffered Si substrate

Cheng Liang Hsu
, Shoou Jinn Chang
, Yan Ru Lin
, Jyh Ming Wu
, Tzer Shen Lin
, Song Yeu Tsai
, I. Cherng Chen

微電子工程研究所

研究成果: Article › 同行評審

25 引文斯高帕斯（Scopus）

摘要

We report the synthesis of well aligned, high density, vertical single-crystal ZnO nanowires on ITO-buffered Si substrate (ITO is indium tin oxide) at 550 °C for 30 min. It was found that the average length and diameter of the ZnO nanowires were around 3.5 νm and 30 nm, respectively. It was also found that the ZnO nanowires were oriented in the (002) direction with extremely good crystal quality. Furthermore, it was found that In diffusion occurred at the bottom of the ZnO nanowires.

原文	English
頁（從 - 到）	516-519
頁數	4
期刊	Nanotechnology
卷	17
發行號	2
DOIs	https://doi.org/10.1088/0957-4484/17/2/029
出版狀態	Published - 2006 1月 28

All Science Journal Classification (ASJC) codes

生物工程
一般化學
一般材料科學
材料力學
機械工業
電氣與電子工程

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10.1088/0957-4484/17/2/029

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title = "Indium-diffused ZnO nanowires synthesized on ITO-buffered Si substrate",

abstract = "We report the synthesis of well aligned, high density, vertical single-crystal ZnO nanowires on ITO-buffered Si substrate (ITO is indium tin oxide) at 550 °C for 30 min. It was found that the average length and diameter of the ZnO nanowires were around 3.5 νm and 30 nm, respectively. It was also found that the ZnO nanowires were oriented in the (002) direction with extremely good crystal quality. Furthermore, it was found that In diffusion occurred at the bottom of the ZnO nanowires.",

author = "Hsu, \{Cheng Liang\} and Chang, \{Shoou Jinn\} and Lin, \{Yan Ru\} and Wu, \{Jyh Ming\} and Lin, \{Tzer Shen\} and Tsai, \{Song Yeu\} and Chen, \{I. Cherng\}",

year = "2006",

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T1 - Indium-diffused ZnO nanowires synthesized on ITO-buffered Si substrate

AU - Hsu, Cheng Liang

AU - Chang, Shoou Jinn

AU - Lin, Yan Ru

AU - Wu, Jyh Ming

AU - Lin, Tzer Shen

AU - Tsai, Song Yeu

AU - Chen, I. Cherng

PY - 2006/1/28

Y1 - 2006/1/28

N2 - We report the synthesis of well aligned, high density, vertical single-crystal ZnO nanowires on ITO-buffered Si substrate (ITO is indium tin oxide) at 550 °C for 30 min. It was found that the average length and diameter of the ZnO nanowires were around 3.5 νm and 30 nm, respectively. It was also found that the ZnO nanowires were oriented in the (002) direction with extremely good crystal quality. Furthermore, it was found that In diffusion occurred at the bottom of the ZnO nanowires.

AB - We report the synthesis of well aligned, high density, vertical single-crystal ZnO nanowires on ITO-buffered Si substrate (ITO is indium tin oxide) at 550 °C for 30 min. It was found that the average length and diameter of the ZnO nanowires were around 3.5 νm and 30 nm, respectively. It was also found that the ZnO nanowires were oriented in the (002) direction with extremely good crystal quality. Furthermore, it was found that In diffusion occurred at the bottom of the ZnO nanowires.

UR - https://www.scopus.com/pages/publications/32644436166

UR - https://www.scopus.com/pages/publications/32644436166#tab=citedBy

U2 - 10.1088/0957-4484/17/2/029

DO - 10.1088/0957-4484/17/2/029

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SN - 0957-4484

VL - 17

SP - 516

EP - 519

JO - Nanotechnology

JF - Nanotechnology

IS - 2

ER -

Indium-diffused ZnO nanowires synthesized on ITO-buffered Si substrate

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