Indium gallium oxide thin film transistor for two-stage UV sensor application

Wei Lun Huang, Ming Hung Hsu, Sheng-Po Chang, Shoou-Jinn Chang, Yu Zung Chiou

研究成果: Article

摘要

In this work, indium gallium oxide (IGO) thin film transistor (TFT) was fabricated by radio-frequency (RF) sputtering. The transmittance of the TFT shows larger than 80% cross the visible light region. As a wide bandgap and high transparency semiconducting material, IGO is a potential candidate for UV-detection applications. Measured in the dark, the IGO TFT exhibits a threshold voltage of 0.9 V, mobility of 2.66 cm2/Vs, on-off ratio of 1.21×106, subthreshold swing of 0.41 V/dec. The TFT was then employed to detect UV light and the sensing properties are investigated. The IGO phototransistor has a high responsivity of 5.012 A/W and a rejection ratio of 1.65×105. The above results reveal that IGO phototransistor is a brilliant multi-functional device, which can serve as either a switch component or a UV sensor.

原文English
頁(從 - 到)Q3140-Q3143
期刊ECS Journal of Solid State Science and Technology
8
發行號7
DOIs
出版狀態Published - 2019 一月 1

指紋

Indium
Gallium
Thin film transistors
Oxide films
Sensors
Phototransistors
Oxides
Threshold voltage
Ultraviolet radiation
Transparency
Sputtering
Energy gap
Switches
gallium oxide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

引用此文

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abstract = "In this work, indium gallium oxide (IGO) thin film transistor (TFT) was fabricated by radio-frequency (RF) sputtering. The transmittance of the TFT shows larger than 80{\%} cross the visible light region. As a wide bandgap and high transparency semiconducting material, IGO is a potential candidate for UV-detection applications. Measured in the dark, the IGO TFT exhibits a threshold voltage of 0.9 V, mobility of 2.66 cm2/Vs, on-off ratio of 1.21×106, subthreshold swing of 0.41 V/dec. The TFT was then employed to detect UV light and the sensing properties are investigated. The IGO phototransistor has a high responsivity of 5.012 A/W and a rejection ratio of 1.65×105. The above results reveal that IGO phototransistor is a brilliant multi-functional device, which can serve as either a switch component or a UV sensor.",
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Indium gallium oxide thin film transistor for two-stage UV sensor application. / Huang, Wei Lun; Hsu, Ming Hung; Chang, Sheng-Po; Chang, Shoou-Jinn; Chiou, Yu Zung.

於: ECS Journal of Solid State Science and Technology, 卷 8, 編號 7, 01.01.2019, p. Q3140-Q3143.

研究成果: Article

TY - JOUR

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AU - Huang, Wei Lun

AU - Hsu, Ming Hung

AU - Chang, Sheng-Po

AU - Chang, Shoou-Jinn

AU - Chiou, Yu Zung

PY - 2019/1/1

Y1 - 2019/1/1

N2 - In this work, indium gallium oxide (IGO) thin film transistor (TFT) was fabricated by radio-frequency (RF) sputtering. The transmittance of the TFT shows larger than 80% cross the visible light region. As a wide bandgap and high transparency semiconducting material, IGO is a potential candidate for UV-detection applications. Measured in the dark, the IGO TFT exhibits a threshold voltage of 0.9 V, mobility of 2.66 cm2/Vs, on-off ratio of 1.21×106, subthreshold swing of 0.41 V/dec. The TFT was then employed to detect UV light and the sensing properties are investigated. The IGO phototransistor has a high responsivity of 5.012 A/W and a rejection ratio of 1.65×105. The above results reveal that IGO phototransistor is a brilliant multi-functional device, which can serve as either a switch component or a UV sensor.

AB - In this work, indium gallium oxide (IGO) thin film transistor (TFT) was fabricated by radio-frequency (RF) sputtering. The transmittance of the TFT shows larger than 80% cross the visible light region. As a wide bandgap and high transparency semiconducting material, IGO is a potential candidate for UV-detection applications. Measured in the dark, the IGO TFT exhibits a threshold voltage of 0.9 V, mobility of 2.66 cm2/Vs, on-off ratio of 1.21×106, subthreshold swing of 0.41 V/dec. The TFT was then employed to detect UV light and the sensing properties are investigated. The IGO phototransistor has a high responsivity of 5.012 A/W and a rejection ratio of 1.65×105. The above results reveal that IGO phototransistor is a brilliant multi-functional device, which can serve as either a switch component or a UV sensor.

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