Indium tin oxide ohmic contact to highly doped n-GaN

J. K. Sheu, Y. K. Su, G. C. Chi, M. J. Jou, C. C. Liu, C. M. Chang

研究成果: Article同行評審

39 引文 斯高帕斯(Scopus)

摘要

The electrical characteristics of the indium tin oxide (ITO) contacts on n-GaN with various doping concentrations have been studied. Ohmic behavior was observed for ITO films on highly doped n-GaN (n = 1 × 1019 cm-3) without thermal annealing and the measured specific contact resistance was 5.1 × 10-4 Ω cm2. This result could be attributed to the formation of a tunneling junction on the heavily n-type GaN surface. However, as the thermal annealing was performed to the ITO/n-GaN (n = 1 × 1019 cm-3) Ohmic contact, it exhibited Schottky characteristics. This result might be due to the microscopic interfacial reaction among In, Sn, O and GaN and their alloys which extend into GaN films, thereby influencing the electrical properties of ITO/n-GaN contacts.

原文English
頁(從 - 到)2081-2084
頁數4
期刊Solid-State Electronics
43
發行號11
DOIs
出版狀態Published - 1999 11月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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