Induced Base Transistor Fabricated by Molecular Beam Epitaxy

Chun Yen Chang; W. C. Liu; M. S. Jame; Y. H. Wang; Serge Luryi; Simon M. Sze

doi:10.1109/EDL.1986.26451

Induced Base Transistor Fabricated by Molecular Beam Epitaxy

Chun Yen Chang, W. C. Liu, M. S. Jame, Y. H. Wang, Serge Luryi, Simon M. Sze

微電子工程研究所

研究成果: Article › 同行評審

15 引文斯高帕斯（Scopus）

摘要

A novel three-terminal hot-electron device, the induced base transistor (IBT), has been fabricated by molecular beam epitaxy (MBE). Two-dimensional electron gas (2-DEG) induced by the applied collector field in an undoped GaAs quantum well is used as the base of the IBT. The common-base current gain a has been achieved as high as 0.96 under a collector bias of 2.5 V and an emitter current of 3 mA.

原文	English
頁（從 - 到）	497-499
頁數	3
期刊	IEEE Electron Device Letters
卷	7
發行號	9
DOIs	https://doi.org/10.1109/EDL.1986.26451
出版狀態	Published - 1986 9月

All Science Journal Classification (ASJC) codes

電子、光磁材料
電氣與電子工程

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10.1109/EDL.1986.26451

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AU - Luryi, Serge

AU - Sze, Simon M.

PY - 1986/9

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Induced Base Transistor Fabricated by Molecular Beam Epitaxy

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