Induced Base Transistor Fabricated by Molecular Beam Epitaxy

Chun Yen Chang, W. C. Liu, M. S. Jame, Y. H. Wang, Serge Luryi, Simon M. Sze

研究成果: Article

13 引文 (Scopus)

摘要

A novel three-terminal hot-electron device, the induced base transistor (IBT), has been fabricated by molecular beam epitaxy (MBE). Two-dimensional electron gas (2-DEG) induced by the applied collector field in an undoped GaAs quantum well is used as the base of the IBT. The common-base current gain a has been achieved as high as 0.96 under a collector bias of 2.5 V and an emitter current of 3 mA.

原文English
頁(從 - 到)497-499
頁數3
期刊IEEE Electron Device Letters
7
發行號9
DOIs
出版狀態Published - 1986 九月

指紋

Molecular beam epitaxy
Transistors
Electron devices
Two dimensional electron gas
Hot electrons
Semiconductor quantum wells
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

引用此文

Chang, Chun Yen ; Liu, W. C. ; Jame, M. S. ; Wang, Y. H. ; Luryi, Serge ; Sze, Simon M. / Induced Base Transistor Fabricated by Molecular Beam Epitaxy. 於: IEEE Electron Device Letters. 1986 ; 卷 7, 編號 9. 頁 497-499.
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Induced Base Transistor Fabricated by Molecular Beam Epitaxy. / Chang, Chun Yen; Liu, W. C.; Jame, M. S.; Wang, Y. H.; Luryi, Serge; Sze, Simon M.

於: IEEE Electron Device Letters, 卷 7, 編號 9, 09.1986, p. 497-499.

研究成果: Article

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AU - Sze, Simon M.

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