Inductively coupled plasma grown semiconductor films for low cost solar cells with improved light-soaking stability

Chang Hong Shen; Jia Min Shieh; Jung Y. Huang; Hao Chung Kuo; Chih Wei Hsu; Bau Tong Dai; Ching Ting Lee; Ci Ling Pan; Fu Liang Yang

doi:10.1063/1.3615650

Inductively coupled plasma grown semiconductor films for low cost solar cells with improved light-soaking stability

Chang Hong Shen, Jia Min Shieh, Jung Y. Huang, Hao Chung Kuo, Chih Wei Hsu, Bau Tong Dai, Ching Ting Lee, Ci Ling Pan, Fu Liang Yang

光電科學與工程學系

研究成果: Article › 同行評審

23 引文斯高帕斯（Scopus）

摘要

We investigate the performance of a single-junction amorphous Si (a-Si) solar cell fabricated with inductively coupled plasma (ICP) deposition technique. The high-density plasma resulting from high dissociation capacity of ICP enables good-quality hydrogenated Si films to be synthesized at low temperatures. High-density ICP also promotes the diffusion of reactive radicals on substrates and forms a-Si:H films with low defect density (∼3 × 10¹⁵cm^-3). We demonstrate single-junction a-Si solar cells with a conversion efficiency of 9.6% and improved light-soaking stability. This low thermal-budget thin-film technique could open up the feasibility of efficient thin film solar cells on flexible substrates.

原文	English
文章編號	033510
期刊	Applied Physics Letters
卷	99
發行號	3
DOIs	https://doi.org/10.1063/1.3615650
出版狀態	Published - 2011 7月 18

All Science Journal Classification (ASJC) codes

物理與天文學（雜項）

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10.1063/1.3615650

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title = "Inductively coupled plasma grown semiconductor films for low cost solar cells with improved light-soaking stability",

abstract = "We investigate the performance of a single-junction amorphous Si (a-Si) solar cell fabricated with inductively coupled plasma (ICP) deposition technique. The high-density plasma resulting from high dissociation capacity of ICP enables good-quality hydrogenated Si films to be synthesized at low temperatures. High-density ICP also promotes the diffusion of reactive radicals on substrates and forms a-Si:H films with low defect density (∼3 × 1015cm-3). We demonstrate single-junction a-Si solar cells with a conversion efficiency of 9.6% and improved light-soaking stability. This low thermal-budget thin-film technique could open up the feasibility of efficient thin film solar cells on flexible substrates.",

author = "Shen, {Chang Hong} and Shieh, {Jia Min} and Huang, {Jung Y.} and Kuo, {Hao Chung} and Hsu, {Chih Wei} and Dai, {Bau Tong} and Lee, {Ching Ting} and Pan, {Ci Ling} and Yang, {Fu Liang}",

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AU - Shieh, Jia Min

AU - Huang, Jung Y.

AU - Kuo, Hao Chung

AU - Hsu, Chih Wei

AU - Dai, Bau Tong

AU - Lee, Ching Ting

AU - Pan, Ci Ling

AU - Yang, Fu Liang

N1 - Funding Information: The authors would like to thank the National Science Council of the Republic of China, Taiwan, for partially supporting this research.

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AB - We investigate the performance of a single-junction amorphous Si (a-Si) solar cell fabricated with inductively coupled plasma (ICP) deposition technique. The high-density plasma resulting from high dissociation capacity of ICP enables good-quality hydrogenated Si films to be synthesized at low temperatures. High-density ICP also promotes the diffusion of reactive radicals on substrates and forms a-Si:H films with low defect density (∼3 × 1015cm-3). We demonstrate single-junction a-Si solar cells with a conversion efficiency of 9.6% and improved light-soaking stability. This low thermal-budget thin-film technique could open up the feasibility of efficient thin film solar cells on flexible substrates.

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Inductively coupled plasma grown semiconductor films for low cost solar cells with improved light-soaking stability

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