InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with 800°C- and 1000°C-grown p-GaN cap layers were fabricated. Inductively coupled plasma (ICP) using Cl2/BCl3/Ar was used to etch the surface of the InGaN/GaN LEDs. Different compositions of the Cl 2/BCl3/Ar gas system were used to reduce surface roughness after the plasma etching process, that results from the low-temperature (800°C)-grown p-type GaN with a higher hole concentration. The maximum etching rate (∼6000 Å/min) was attained approximately 10% BCl3 in Cl2/BCl3/Ar plasma. Sputter desorption and surface morphology are significantly improved. Furthermore, surface oxidation is suppressed.
|頁（從 - 到）||6800-6802|
|期刊||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版狀態||Published - 2006 九月 7|
All Science Journal Classification (ASJC) codes
- 工程 (全部)
- 物理與天文學 (全部)