Inductively coupled plasma mesa etched InGaN/GaN light emitting diodes using Cl2/BCl3/Ar plasma

Tzong Bin Wang, Wei Chou Hsu, Yen Wei Che, Yeong Jia Chen

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with 800°C- and 1000°C-grown p-GaN cap layers were fabricated. Inductively coupled plasma (ICP) using Cl2/BCl3/Ar was used to etch the surface of the InGaN/GaN LEDs. Different compositions of the Cl 2/BCl3/Ar gas system were used to reduce surface roughness after the plasma etching process, that results from the low-temperature (800°C)-grown p-type GaN with a higher hole concentration. The maximum etching rate (∼6000 Å/min) was attained approximately 10% BCl3 in Cl2/BCl3/Ar plasma. Sputter desorption and surface morphology are significantly improved. Furthermore, surface oxidation is suppressed.

原文English
頁(從 - 到)6800-6802
頁數3
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
45
發行號9 A
DOIs
出版狀態Published - 2006 九月 7

All Science Journal Classification (ASJC) codes

  • 工程 (全部)
  • 物理與天文學 (全部)

指紋

深入研究「Inductively coupled plasma mesa etched InGaN/GaN light emitting diodes using Cl<sub>2</sub>/BCl<sub>3</sub>/Ar plasma」主題。共同形成了獨特的指紋。

引用此