Influence of AlGaN/GaN superlattice inserted structure on the performance of InGaN/GaN multiple quantum well light emitting diodes

Cheng Liang Wang; Ming Chang Tsai; Jyh Rong Gong; Wei Tsai Liao; Ping Yuan Lin; Kuo Yi Yen; Chia Chi Chang; Hsin Yueh Lin; Shen Kwang Hwang

doi:10.1016/j.mseb.2007.01.005

Influence of AlGaN/GaN superlattice inserted structure on the performance of InGaN/GaN multiple quantum well light emitting diodes

Cheng Liang Wang, Ming Chang Tsai, Jyh Rong Gong, Wei Tsai Liao, Ping Yuan Lin, Kuo Yi Yen, Chia Chi Chang, Hsin Yueh Lin, Shen Kwang Hwang

光電科學與工程學系

研究成果: Article › 同行評審

17 引文斯高帕斯（Scopus）

摘要

Investigations were conducted to explore the effect of Al_0.3Ga_0.7N/GaN short-period superlattice (SPSL)-inserted structures in the GaN under layer on the performance of In_0.2Ga_0.8N/GaN multiple quantum well (MQW) light emitting diodes (LEDs). The Al_0.3Ga_0.7N/GaN SPSL-inserted LEDs were found to exhibit improved materials and device characteristics including decrements in ideality factor and reverse leakage current. The results of etch pit counts reveal that SPSL-induced threading dislocation density reduction in the SPSL-inserted In_0.2Ga_0.8N/GaN MQW LED structures enables the improved LED performance.

原文	English
頁（從 - 到）	180-183
頁數	4
期刊	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
卷	138
發行號	2
DOIs	https://doi.org/10.1016/j.mseb.2007.01.005
出版狀態	Published - 2007 3月 25

All Science Journal Classification (ASJC) codes

材料科學(全部)
凝聚態物理學
材料力學
機械工業

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10.1016/j.mseb.2007.01.005

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Wang, C. L., Tsai, M. C., Gong, J. R., Liao, W. T., Lin, P. Y., Yen, K. Y., Chang, C. C., Lin, H. Y., & Hwang, S. K. (2007). Influence of AlGaN/GaN superlattice inserted structure on the performance of InGaN/GaN multiple quantum well light emitting diodes. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 138(2), 180-183. https://doi.org/10.1016/j.mseb.2007.01.005

@article{280fe3345ca84b6ebaf6894a115e1388,

title = "Influence of AlGaN/GaN superlattice inserted structure on the performance of InGaN/GaN multiple quantum well light emitting diodes",

abstract = "Investigations were conducted to explore the effect of Al0.3Ga0.7N/GaN short-period superlattice (SPSL)-inserted structures in the GaN under layer on the performance of In0.2Ga0.8N/GaN multiple quantum well (MQW) light emitting diodes (LEDs). The Al0.3Ga0.7N/GaN SPSL-inserted LEDs were found to exhibit improved materials and device characteristics including decrements in ideality factor and reverse leakage current. The results of etch pit counts reveal that SPSL-induced threading dislocation density reduction in the SPSL-inserted In0.2Ga0.8N/GaN MQW LED structures enables the improved LED performance.",

author = "Wang, {Cheng Liang} and Tsai, {Ming Chang} and Gong, {Jyh Rong} and Liao, {Wei Tsai} and Lin, {Ping Yuan} and Yen, {Kuo Yi} and Chang, {Chia Chi} and Lin, {Hsin Yueh} and Hwang, {Shen Kwang}",

note = "Funding Information: This work was supported in part by the National Science Council of Taiwan, Republic of China under contract numbers NSC93-2622-E-194-006-CC3 and NSC93-2215-E-194-008. The authors are grateful to Dr. Bor-Jen Wu and Mr. Ming-Fa Yeh at Uni Light Technology Inc., Taiwan, Republic of China for their assistance on the epitaxial growth.",

year = "2007",

month = mar,

day = "25",

doi = "10.1016/j.mseb.2007.01.005",

language = "English",

volume = "138",

pages = "180--183",

journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",

issn = "0921-5107",

publisher = "Elsevier BV",

number = "2",

}

Wang, CL, Tsai, MC, Gong, JR, Liao, WT, Lin, PY, Yen, KY, Chang, CC, Lin, HY & Hwang, SK 2007, 'Influence of AlGaN/GaN superlattice inserted structure on the performance of InGaN/GaN multiple quantum well light emitting diodes', Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 卷 138, 編號 2, 頁 180-183. https://doi.org/10.1016/j.mseb.2007.01.005

TY - JOUR

T1 - Influence of AlGaN/GaN superlattice inserted structure on the performance of InGaN/GaN multiple quantum well light emitting diodes

AU - Wang, Cheng Liang

AU - Tsai, Ming Chang

AU - Gong, Jyh Rong

AU - Liao, Wei Tsai

AU - Lin, Ping Yuan

AU - Yen, Kuo Yi

AU - Chang, Chia Chi

AU - Lin, Hsin Yueh

AU - Hwang, Shen Kwang

N1 - Funding Information: This work was supported in part by the National Science Council of Taiwan, Republic of China under contract numbers NSC93-2622-E-194-006-CC3 and NSC93-2215-E-194-008. The authors are grateful to Dr. Bor-Jen Wu and Mr. Ming-Fa Yeh at Uni Light Technology Inc., Taiwan, Republic of China for their assistance on the epitaxial growth.

PY - 2007/3/25

Y1 - 2007/3/25

N2 - Investigations were conducted to explore the effect of Al0.3Ga0.7N/GaN short-period superlattice (SPSL)-inserted structures in the GaN under layer on the performance of In0.2Ga0.8N/GaN multiple quantum well (MQW) light emitting diodes (LEDs). The Al0.3Ga0.7N/GaN SPSL-inserted LEDs were found to exhibit improved materials and device characteristics including decrements in ideality factor and reverse leakage current. The results of etch pit counts reveal that SPSL-induced threading dislocation density reduction in the SPSL-inserted In0.2Ga0.8N/GaN MQW LED structures enables the improved LED performance.

AB - Investigations were conducted to explore the effect of Al0.3Ga0.7N/GaN short-period superlattice (SPSL)-inserted structures in the GaN under layer on the performance of In0.2Ga0.8N/GaN multiple quantum well (MQW) light emitting diodes (LEDs). The Al0.3Ga0.7N/GaN SPSL-inserted LEDs were found to exhibit improved materials and device characteristics including decrements in ideality factor and reverse leakage current. The results of etch pit counts reveal that SPSL-induced threading dislocation density reduction in the SPSL-inserted In0.2Ga0.8N/GaN MQW LED structures enables the improved LED performance.

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JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

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Influence of AlGaN/GaN superlattice inserted structure on the performance of InGaN/GaN multiple quantum well light emitting diodes

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