This study focuses on TiO2 thin films grown on quartz substrates using radio frequency magnetron sputtering. These films were annealed under argon, air, oxygen, and nitrogen ambients via a fused-silica tube furnace, and were then used to fabricate metalsemiconductor- metal (MSM) ultraviolet (UV) photodetectors (PDs). Further, all fabricated detectors exhibited a low dark current. Finally, we observed that under an N2 ambient, we could acquire the best parameters for annealing TiO2 UV PDs, with a maximum responsivity of 1.73×10-2 A/W, while the UV-to-visible rejection ratio achieved five orders of magnitude with a 330-nm illumination at 10 V applied bias. We attributed the reduction in dark current to the filling of oxygen vacancies from N2; hence, the response was improved. We believe that this method can be used to develop a highly-applicable and low-cost device.
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