Influence of AZO stair-like transparent layers on GaN-based light-emitting diodes

Syuan Hao Liou, Jung Hui Tsai, Wen-Chau Liu, Pao Sheng Lin, Yu Chi Chen

研究成果: Article

1 引文 (Scopus)

摘要

The GaN-based light-emitting diodes (LEDs) with various height ratios of aluminum-doped zinc oxide (AZO) stair-like transparent layers are fabricated and comparatively investigated. The characteristics of the LEDs with conventional plane AZO transparent layer (device A) and AZO stair-like transparent layers having height ratios of 1:1:1 (device B), 1.5:1:0.5 (device C), and 0.5:1:1.5 (device D) are compared. Attributed that the lower resistance is formed in the thinner AZO film of the stair-like structure, the current crowding effect is improved for extending the whole current-spreading area. Experimentally, the forward turn-on voltages of the LEDs are reduced from 3.68 V to 3.42 V as the plane AZO transparent layer is processed to form the stair-like transparent layers with height ratio of 1:1:1. In addition, the light luminous flux, output power, external quantum efficiency, and wall-plug efficiency of the device B are enhanced by 30.5, 12.1, 22.2, and 20.7%, respectively, as compared to the traditional device with plane AZO transparent layer.

原文English
頁(從 - 到)171-179
頁數9
期刊Superlattices and Microstructures
110
DOIs
出版狀態Published - 2017 十月 1

指紋

Zinc Oxide
Stairs
Zinc oxide
Aluminum
zinc oxides
Light emitting diodes
light emitting diodes
aluminum
crowding
low resistance
plugs
Quantum efficiency
Oxide films
oxide films
quantum efficiency
Fluxes
output
Electric potential
electric potential

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

引用此文

Liou, Syuan Hao ; Tsai, Jung Hui ; Liu, Wen-Chau ; Lin, Pao Sheng ; Chen, Yu Chi. / Influence of AZO stair-like transparent layers on GaN-based light-emitting diodes. 於: Superlattices and Microstructures. 2017 ; 卷 110. 頁 171-179.
@article{7abdd0f716b14af5a0d4807b83eb33a2,
title = "Influence of AZO stair-like transparent layers on GaN-based light-emitting diodes",
abstract = "The GaN-based light-emitting diodes (LEDs) with various height ratios of aluminum-doped zinc oxide (AZO) stair-like transparent layers are fabricated and comparatively investigated. The characteristics of the LEDs with conventional plane AZO transparent layer (device A) and AZO stair-like transparent layers having height ratios of 1:1:1 (device B), 1.5:1:0.5 (device C), and 0.5:1:1.5 (device D) are compared. Attributed that the lower resistance is formed in the thinner AZO film of the stair-like structure, the current crowding effect is improved for extending the whole current-spreading area. Experimentally, the forward turn-on voltages of the LEDs are reduced from 3.68 V to 3.42 V as the plane AZO transparent layer is processed to form the stair-like transparent layers with height ratio of 1:1:1. In addition, the light luminous flux, output power, external quantum efficiency, and wall-plug efficiency of the device B are enhanced by 30.5, 12.1, 22.2, and 20.7{\%}, respectively, as compared to the traditional device with plane AZO transparent layer.",
author = "Liou, {Syuan Hao} and Tsai, {Jung Hui} and Wen-Chau Liu and Lin, {Pao Sheng} and Chen, {Yu Chi}",
year = "2017",
month = "10",
day = "1",
doi = "10.1016/j.spmi.2017.08.047",
language = "English",
volume = "110",
pages = "171--179",
journal = "Superlattices and Microstructures",
issn = "0749-6036",
publisher = "Academic Press Inc.",

}

Influence of AZO stair-like transparent layers on GaN-based light-emitting diodes. / Liou, Syuan Hao; Tsai, Jung Hui; Liu, Wen-Chau; Lin, Pao Sheng; Chen, Yu Chi.

於: Superlattices and Microstructures, 卷 110, 01.10.2017, p. 171-179.

研究成果: Article

TY - JOUR

T1 - Influence of AZO stair-like transparent layers on GaN-based light-emitting diodes

AU - Liou, Syuan Hao

AU - Tsai, Jung Hui

AU - Liu, Wen-Chau

AU - Lin, Pao Sheng

AU - Chen, Yu Chi

PY - 2017/10/1

Y1 - 2017/10/1

N2 - The GaN-based light-emitting diodes (LEDs) with various height ratios of aluminum-doped zinc oxide (AZO) stair-like transparent layers are fabricated and comparatively investigated. The characteristics of the LEDs with conventional plane AZO transparent layer (device A) and AZO stair-like transparent layers having height ratios of 1:1:1 (device B), 1.5:1:0.5 (device C), and 0.5:1:1.5 (device D) are compared. Attributed that the lower resistance is formed in the thinner AZO film of the stair-like structure, the current crowding effect is improved for extending the whole current-spreading area. Experimentally, the forward turn-on voltages of the LEDs are reduced from 3.68 V to 3.42 V as the plane AZO transparent layer is processed to form the stair-like transparent layers with height ratio of 1:1:1. In addition, the light luminous flux, output power, external quantum efficiency, and wall-plug efficiency of the device B are enhanced by 30.5, 12.1, 22.2, and 20.7%, respectively, as compared to the traditional device with plane AZO transparent layer.

AB - The GaN-based light-emitting diodes (LEDs) with various height ratios of aluminum-doped zinc oxide (AZO) stair-like transparent layers are fabricated and comparatively investigated. The characteristics of the LEDs with conventional plane AZO transparent layer (device A) and AZO stair-like transparent layers having height ratios of 1:1:1 (device B), 1.5:1:0.5 (device C), and 0.5:1:1.5 (device D) are compared. Attributed that the lower resistance is formed in the thinner AZO film of the stair-like structure, the current crowding effect is improved for extending the whole current-spreading area. Experimentally, the forward turn-on voltages of the LEDs are reduced from 3.68 V to 3.42 V as the plane AZO transparent layer is processed to form the stair-like transparent layers with height ratio of 1:1:1. In addition, the light luminous flux, output power, external quantum efficiency, and wall-plug efficiency of the device B are enhanced by 30.5, 12.1, 22.2, and 20.7%, respectively, as compared to the traditional device with plane AZO transparent layer.

UR - http://www.scopus.com/inward/record.url?scp=85028510292&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85028510292&partnerID=8YFLogxK

U2 - 10.1016/j.spmi.2017.08.047

DO - 10.1016/j.spmi.2017.08.047

M3 - Article

AN - SCOPUS:85028510292

VL - 110

SP - 171

EP - 179

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

SN - 0749-6036

ER -