Influence of damp heat on the electrical, optical, and morphological properties of encapsulated CuInGaSe 2 devices

R. Sundaramoorthy, F. J. Pern, G. Teeter, Jian V. Li, M. Young, D. Kuciauskas, N. Call, F. Yan, B. To, S. Johnston, R. Noufi, T. A. Gessert

研究成果: Conference contribution

4 引文 斯高帕斯(Scopus)

摘要

CuInGaSe 2 (CIGS) devices, encapsulated with different backsheets having different water vapor transmission rates (WVTR), were exposed to damp heat (DH) at 85°C and 85% relative humidity (RH) and characterized periodically to understand junction degradation induced by moisture ingress. Performance degradation of the devices was primarily driven by an increase in series resistance within first 50 h of exposure, resulting in a decrease in fill factor and, accompanied loss in carrier concentration and widening of depletion width. Surface analysis of the devices after 700-h DH exposure showed the formation of Zn(OH) 2 from hydrolysis of the Al-doped ZnO (AZO) window layer by the moisture, which was detrimental to the collection of minority carriers. Minority carrier lifetimes observed for the CIGS devices using time resolved photoluminescence (TRPL) remained relatively long after DH exposure. By etching the DH-exposed devices and re-fabricating with new component layers, the performance of reworked devices improved significantly, further indicating that DH-induced degradation of the AZO layer and/or the CdS buffer was the primary performance-degrading factor.

原文English
主出版物標題Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
頁面3404-3409
頁數6
DOIs
出版狀態Published - 2011 十二月 1
事件37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States
持續時間: 2011 六月 192011 六月 24

出版系列

名字Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN(列印)0160-8371

Other

Other37th IEEE Photovoltaic Specialists Conference, PVSC 2011
國家/地區United States
城市Seattle, WA
期間11-06-1911-06-24

All Science Journal Classification (ASJC) codes

  • 控制與系統工程
  • 工業與製造工程
  • 電氣與電子工程

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