Influence of deposition conditions on silicon nanoclusters in silicon nitride films grown by laser-assisted CVD method

Tai Cheng Tsai, Li Ren Lou, Ching Ting Lee

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

Crystalline-silicon-nanocluster-embedded silicon nitride films were deposited at low temperature using a laser-assisted CVD (LACVD) system with various reactant gas flow rates and assisting laser power densities. The photoluminescence (PL) performances of the resultant films were studied, showing a systematic spectra blue shift, and the enhancement of PL intensity with the increase of the reactant NH3/SiH4 gas flow rate ratio and the assisting laser power density used in the film deposition. The spectra blue shift can be ascribed to the decrease of the size of the nanoclusters in the films. It is also deduced that both the reduction of the amount of nonradiative centers in the nanoclusters and the increase of the number density of the nanoclusters in the film are responsible for the enhancement of the PL intensity. The film growth process is also briefly discussed.

原文English
文章編號5340623
頁(從 - 到)197-202
頁數6
期刊IEEE Transactions on Nanotechnology
10
發行號2
DOIs
出版狀態Published - 2011 3月

All Science Journal Classification (ASJC) codes

  • 電腦科學應用
  • 電氣與電子工程

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