Influence of doping rate in Er3+: ZnO films on emission characteristics

L. Douglas, R. Mundle, R. Konda, C. E. Bonner, A. K. Pradhan, D. R. Sahu, Jow-Lay Huang

研究成果: Article同行評審

26 引文 斯高帕斯(Scopus)

摘要

High-quality Er3+: ZnO films were grown by the pulsed-laser deposition technique for 0.5 and 2wt. % Er doping. Two peaks were observed at approximately 1.54 μm in the photoluminescence spectra of samples with 2 wt. % doping contrary to only one peak in the 0.5 wt. % doped sample. Both peaks were found to be strongly temperature dependent. The microscopic studies clearly illustrate that the appearance of the additional peak is attributed to the environment of Er3+ ions in the form of ErO6 clusters, which are optically active centers in the ZnO matrix. These results are very important for designing waveguides for telecommunications.

原文English
頁(從 - 到)815-817
頁數3
期刊Optics Letters
33
發行號8
DOIs
出版狀態Published - 2008 四月 15

All Science Journal Classification (ASJC) codes

  • 原子與分子物理與光學

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