High-quality Er3+: ZnO films were grown by the pulsed-laser deposition technique for 0.5 and 2wt. % Er doping. Two peaks were observed at approximately 1.54 μm in the photoluminescence spectra of samples with 2 wt. % doping contrary to only one peak in the 0.5 wt. % doped sample. Both peaks were found to be strongly temperature dependent. The microscopic studies clearly illustrate that the appearance of the additional peak is attributed to the environment of Er3+ ions in the form of ErO6 clusters, which are optically active centers in the ZnO matrix. These results are very important for designing waveguides for telecommunications.
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