Influence of emitter-edge-thinning thickness on the heterojunction bipolar transistor performance

Ssu I. Fu, Tzu Pin Chen, Rong Chau Liu, Shiou Ying Cheng, Po Hsien Lai, Yan Ying Tsai, Ching Wen Hung, Wen Chau Liu

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

In this work, the characteristics of the InGaPGaAs heterojunction bipolar transistors with different emitter-edge-thinning thickness were systematically investigated. A stronger downward-band-bending phenomenon was observed at the edge of emitter-edge-thinning intersection with the exposed base surface. This band bending induced the presence of a potential saddle point, which substantially increased the recombination rates and electron densities. In addition, the decision of emitter-edge-thinning thickness plays a key role in reducing surface recombination at the potential saddle point. As the emitter-edge-thinning thickness was selected between 100 and 200 Å, the lowest recombination rate and electron density and highest dc current gain could be obtained. Furthermore, good agreements between the theoretical analyses and experimental results were found.

原文English
頁(從 - 到)H289-H292
期刊Journal of the Electrochemical Society
154
發行號4
DOIs
出版狀態Published - 2007

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 可再生能源、永續發展與環境
  • 表面、塗料和薄膜
  • 電化學
  • 材料化學

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