Influence of measuring environment on the electrical characteristics of pentacene-based thin film transistors

Yu Wu Wang, Horng Long Cheng, Yi Kai Wang, Tang Hsiang Hu, Jia Chong Ho, Cheng Chung Lee, Tan Fu Lei, Ching Fa Yeh

研究成果: Article同行評審

37 引文 斯高帕斯(Scopus)

摘要

This work concerns the electrical properties and carrier transport behavior of polycrystalline pentacene-based thin film transistors (TFTs) in air and high-vacuum environments. The transistor in a high vacuum outperforms that in air. The dependence of the field-effect mobility on the gate voltage and the drain voltage is considered. A potential barrier model is applied to estimate the trap density of the pentacene transistor. The determined trap density at the grain boundaries of the pentacene film in air exceeds that in a high vacuum. These results show that the increased trap concentration at the grain boundaries in ambient air limits carrier transport.

原文English
頁(從 - 到)215-219
頁數5
期刊Thin Solid Films
467
發行號1-2
DOIs
出版狀態Published - 2004 11月 22

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 表面和介面
  • 表面、塗料和薄膜
  • 金屬和合金
  • 材料化學

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