Influence of oxygen on diffusion in the Cu/Mo/Au system

S. Raud, J. S. Chen, M. A. Nicolet

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

The annealing behaviour of the Cu/Mo/Au metallization system is investigated. Backscattering spectrometry reveals a rapid diffusion of Cu and Au across the Mo film and the formation of AuCu after annealing at 600°C for 30 min in vacuum, but only when no impurity is detected in the as-deposited polycrystalline Mo layer. The Au-Cu interaction is impeded when 5.5 at% of oxygen is introduced in the as-deposited Mo layer. The thin film microstructures are analyzed using X-ray diffraction and transmission electron microscopy. The thermal stability difference between the samples with a pure Mo layer and a contaminated Mo layer is discussed in terms of fast diffusion process inhibited by a grain boundary decoration with oxygen atoms.

原文English
頁(從 - 到)151-154
頁數4
期刊Applied Physics A Solids and Surfaces
52
發行號2
DOIs
出版狀態Published - 1991 二月 1

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy (miscellaneous)

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