Influence of oxygen on the performance of indium titanium zinc oxide UV sensors fabricated via RF sputtering

Ming Hung Hsu, Sheng Po Chang, Shoou Jinn Chang, Wei Ting Wu, Jyun Yi Li

研究成果: Article

4 引文 (Scopus)

摘要

The authors report the sputtering-based syntheses of five amorphous indium titanium zinc oxide (InTiZnO) UV sensing devices with Ni/Au electrodes. To investigate their UV photodetection performance, the devices were subjected to current-voltage (I-V) characteristic measurements in the dark and under visible light and UV illumination. The oxygen flow ratio played a critical role in the sensing performance of the devices. That is, incorporation of oxygen during RF sputtering may influence the number of oxygen-related defects in the films. All devices exhibited transmittances of over 80% in the visible light region. With an applied bias of 10 V and 290 nm illumination, sample B exhibited a photo-to-dark current ratio of over 104, a UV-to-visible rejection ratio of over 103, and a photoresponsivity of 0.17 A/W.

原文English
頁(從 - 到)297-302
頁數6
期刊Materials Science in Semiconductor Processing
74
DOIs
出版狀態Published - 2018 二月

指紋

Zinc Oxide
Indium
Titanium oxides
Zinc oxide
titanium oxides
zinc oxides
Sputtering
indium
sputtering
Oxygen
sensors
Sensors
oxygen
Lighting
Dark currents
illumination
dark current
rejection
transmittance
Defects

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

引用此文

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title = "Influence of oxygen on the performance of indium titanium zinc oxide UV sensors fabricated via RF sputtering",
abstract = "The authors report the sputtering-based syntheses of five amorphous indium titanium zinc oxide (InTiZnO) UV sensing devices with Ni/Au electrodes. To investigate their UV photodetection performance, the devices were subjected to current-voltage (I-V) characteristic measurements in the dark and under visible light and UV illumination. The oxygen flow ratio played a critical role in the sensing performance of the devices. That is, incorporation of oxygen during RF sputtering may influence the number of oxygen-related defects in the films. All devices exhibited transmittances of over 80{\%} in the visible light region. With an applied bias of 10 V and 290 nm illumination, sample B exhibited a photo-to-dark current ratio of over 104, a UV-to-visible rejection ratio of over 103, and a photoresponsivity of 0.17 A/W.",
author = "Hsu, {Ming Hung} and Chang, {Sheng Po} and Chang, {Shoou Jinn} and Wu, {Wei Ting} and Li, {Jyun Yi}",
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T1 - Influence of oxygen on the performance of indium titanium zinc oxide UV sensors fabricated via RF sputtering

AU - Hsu, Ming Hung

AU - Chang, Sheng Po

AU - Chang, Shoou Jinn

AU - Wu, Wei Ting

AU - Li, Jyun Yi

PY - 2018/2

Y1 - 2018/2

N2 - The authors report the sputtering-based syntheses of five amorphous indium titanium zinc oxide (InTiZnO) UV sensing devices with Ni/Au electrodes. To investigate their UV photodetection performance, the devices were subjected to current-voltage (I-V) characteristic measurements in the dark and under visible light and UV illumination. The oxygen flow ratio played a critical role in the sensing performance of the devices. That is, incorporation of oxygen during RF sputtering may influence the number of oxygen-related defects in the films. All devices exhibited transmittances of over 80% in the visible light region. With an applied bias of 10 V and 290 nm illumination, sample B exhibited a photo-to-dark current ratio of over 104, a UV-to-visible rejection ratio of over 103, and a photoresponsivity of 0.17 A/W.

AB - The authors report the sputtering-based syntheses of five amorphous indium titanium zinc oxide (InTiZnO) UV sensing devices with Ni/Au electrodes. To investigate their UV photodetection performance, the devices were subjected to current-voltage (I-V) characteristic measurements in the dark and under visible light and UV illumination. The oxygen flow ratio played a critical role in the sensing performance of the devices. That is, incorporation of oxygen during RF sputtering may influence the number of oxygen-related defects in the films. All devices exhibited transmittances of over 80% in the visible light region. With an applied bias of 10 V and 290 nm illumination, sample B exhibited a photo-to-dark current ratio of over 104, a UV-to-visible rejection ratio of over 103, and a photoresponsivity of 0.17 A/W.

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