Influence of polymer gate dielectrics on n -channel conduction of pentacene-based organic field-effect transistors

Tzung Fang Guo, Zen Jay Tsai, Shi Yu Chen, Ten Chin Wen, Chia Tin Chung

研究成果: Article同行評審

21 引文 斯高帕斯(Scopus)

摘要

This work elucidates the way polymer gate dielectrics affect the accumulation and transport of charge carriers in the active layer of organic field-effect transistors (OFETs). Incorporating a poly(vinyl alcohol) polymer interfacial film and another cross-linked poly(4-vinyl phenol) layer as a double-layer gate dielectric causes the pentacene-based OFETs to exhibit effective n -channel conduction of a saturated, apparent pinch-off drain-source current with the electron mobility of ∼0.012 cm2 V-1 s-1. The formation of an n channel in the pentacene layer is supported by the increased capacitance that is identified by the quasistatic capacitance-voltage measurements of devices with the metal-insulator-semiconductor configuration, biased at a positive gate voltage, in the n -type accumulation regime.

原文English
文章編號124505
期刊Journal of Applied Physics
101
發行號12
DOIs
出版狀態Published - 2007

All Science Journal Classification (ASJC) codes

  • 一般物理與天文學

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