Influence of polymer gate dielectrics on n-type pentacene-based organic field-effect transistors

Tzung Fang Guo, Zen Jay Tsai, Shi Yu Chen, Ten Chin Wen, Chia Tin Chung

研究成果: Conference contribution

摘要

This work addresses how the polymer gate dielectrics affect the accumulation and transport of charge carriers in the active layer of organic field-effect transistors (OFETs). Incorporating a double-layer gate dielectric, pentacene-based OFETs present an effective n-channel conduction, which carries a saturated, apparent pinch-off drain-source current with the promising electron mobility. The formation of n-channel in pentacene layer is supported by the increased capacitance at the quasi-static capacitance-voltage measurements for devices of the metal-insulator-semiconductor configuration biased at a positive gate voltage, in the n-type accumulation regime.

原文English
主出版物標題IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings
頁面453-455
頁數3
出版狀態Published - 2007 十二月 1
事件International Display Manufacturing Conference and Exhibition, IDMC 2007 - Taipei, Taiwan
持續時間: 2007 七月 32007 七月 6

出版系列

名字IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings

Other

OtherInternational Display Manufacturing Conference and Exhibition, IDMC 2007
國家/地區Taiwan
城市Taipei
期間07-07-0307-07-06

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程
  • 工業與製造工程
  • 電子、光磁材料

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