Influence of polymer gate dielectrics on n-type pentacene-based organic field-effect transistors

This work addresses how the polymer gate dielectrics affect the accumulation and transport of charge carriers in the active layer of organic field-effect transistors (OFETs). Incorporating a double-layer gate dielectric, pentacene-based OFETs present an effective n-channel conduction, which carries a saturated, apparent pinch-off drain-source current with the promising electron mobility. The formation of n-channel in pentacene layer is supported by the increased capacitance at the quasi-static capacitance-voltage measurements for devices of the metal-insulator-semiconductor configuration biased at a positive gate voltage, in the n-type accumulation regime.