TY - JOUR
T1 - Influence of substrate type and quality on carrier mobility in graphene nanoribbons
AU - Poljak, M.
AU - Suligoj, T.
AU - Wang, K. L.
N1 - Funding Information:
M. P. and T. S. acknowledge partial financial support from the Ministry of Science, Education and Sport of the Republic of Croatia, under Contract No. 036-0361566-1567. K. L. W. acknowledges financial support from the MARCO Focus Center on Functional Engineered Nano Architectonics (FENA).
PY - 2013/8/7
Y1 - 2013/8/7
N2 - We report the results of a thorough numerical study on carrier mobility in graphene nanoribbons (GNRs) with the widths from ∼250 nm down to ∼1 nm, with a focus on the influence of substrate type (SiO2, Al 2O3, HfO2, and h-BN) and substrate quality (different interface impurity densities) on GNR mobility. We identify the interplay between the contributions of Coulomb and surface optical phonon scattering as the crucial factor that determines the optimum substrate in terms of carrier mobility. In the case of high impurity density (∼1013 cm-2), we find that HfO2 is the optimum substrate irrespective of GNR width. In contrast, for low impurity density (10 10 cm-2), h-BN offers the greatest enhancement, except for nanoribbons wider than ∼200 nm for which the mobility is highest on HfO2.
AB - We report the results of a thorough numerical study on carrier mobility in graphene nanoribbons (GNRs) with the widths from ∼250 nm down to ∼1 nm, with a focus on the influence of substrate type (SiO2, Al 2O3, HfO2, and h-BN) and substrate quality (different interface impurity densities) on GNR mobility. We identify the interplay between the contributions of Coulomb and surface optical phonon scattering as the crucial factor that determines the optimum substrate in terms of carrier mobility. In the case of high impurity density (∼1013 cm-2), we find that HfO2 is the optimum substrate irrespective of GNR width. In contrast, for low impurity density (10 10 cm-2), h-BN offers the greatest enhancement, except for nanoribbons wider than ∼200 nm for which the mobility is highest on HfO2.
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U2 - 10.1063/1.4817077
DO - 10.1063/1.4817077
M3 - Article
AN - SCOPUS:84882236928
SN - 0021-8979
VL - 114
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 5
M1 - 053701
ER -