Influence of the δ-doping sheet and setback layer on the performance of an InGaP/GaAs heterojunction bipolar transistor

Shiou Ying Cheng, Hsi Jen Pan, Yung Hsin Shie, Jing Yuh Chen, Wen Lung Chang, Wei Chou Wang, Po Hung Lin, Wen Chau Liu

研究成果: Article同行評審

11 引文 斯高帕斯(Scopus)

摘要

In this paper, we demonstrate the qualitative influence of a δ-doping sheet and setback layer on the performance of an InGaP/GaAs heterojunction bipolar transistor (HBT). The results of a theoretical simulation show that the potential spike is reduced by the simultaneous employment of an appropriate setback layer and δ-doping sheet. Due to the reduction in the potential spike, a high current gain, even at a small collector current regime, and small offset voltage can be attained. Experimentally, an offset voltage as small as 55 mV and current gain of 11 at collector current of 0.5 μA are obtained without a passivation structure.

原文English
頁(從 - 到)1187-1192
頁數6
期刊Semiconductor Science and Technology
13
發行號10
DOIs
出版狀態Published - 1998 十月 1

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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