In this paper, we demonstrate the qualitative influence of a δ-doping sheet and setback layer on the performance of an InGaP/GaAs heterojunction bipolar transistor (HBT). The results of a theoretical simulation show that the potential spike is reduced by the simultaneous employment of an appropriate setback layer and δ-doping sheet. Due to the reduction in the potential spike, a high current gain, even at a small collector current regime, and small offset voltage can be attained. Experimentally, an offset voltage as small as 55 mV and current gain of 11 at collector current of 0.5 μA are obtained without a passivation structure.
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