Influence of UV illumination condition on NDR performance of porous silicon superlattice

S. J. Wang, J. C. Lin, H. Y. Tsai

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

The authors report on the influence of the UV illumination condition on the negative differential resistance (NDR) performance of a porous silicon superlattice. It is found that the peak-to-valley current ratio (PVCR) can be improved by increasing the off-time of the illumination in each period.

原文English
頁(從 - 到)1618-1619
頁數2
期刊Electronics Letters
32
發行號17
DOIs
出版狀態Published - 1996 一月 1

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程

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