Influence of working pressure on structural and optoelectronic properties of Al-doped ZnO thin films

Chien Hsun Chu, Hung Wei Wu, Jow Lay Huang

研究成果: Conference contribution

1 引文 斯高帕斯(Scopus)

摘要

In this study, we investigated the electrical, optical and structural properties of aluminum-doped ZnO (AZO) thin films by RF magnetron sputtering under different working pressure of 5 - 40 mTorr. Optimization of the prepared thin films shows low resistivity of 6.11 × 10-4 ?-cm, mobility of 4.295 cm2/V-s and carrier concentration of 3.277 × 1020 cm-3 at working pressure of 5 mTorr. The maximum transmittance of 98.99 % for wavelengths above 600 nm and Haacke figure of merit (FOM) are 6.44 × 10-3 ?-1 with working pressure of 5 mTorr. These results indicate that AZO thin films are a promising high conductivity transparent electrode scheme for solar cells and various displays applications.

原文English
主出版物標題Proceedings - 2014 International Symposium on Computer, Consumer and Control, IS3C 2014
發行者IEEE Computer Society
頁面569-572
頁數4
ISBN(列印)9781479952779
DOIs
出版狀態Published - 2014 一月 1
事件2nd International Symposium on Computer, Consumer and Control, IS3C 2014 - Taichung, Taiwan
持續時間: 2014 六月 102014 六月 12

出版系列

名字Proceedings - 2014 International Symposium on Computer, Consumer and Control, IS3C 2014

Other

Other2nd International Symposium on Computer, Consumer and Control, IS3C 2014
國家Taiwan
城市Taichung
期間14-06-1014-06-12

All Science Journal Classification (ASJC) codes

  • Computer Science Applications
  • Control and Systems Engineering

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