@inproceedings{07463a9c1c494051822cb4fef5da5596,
title = "Influence of working pressure on structural and optoelectronic properties of Al-doped ZnO thin films",
abstract = "In this study, we investigated the electrical, optical and structural properties of aluminum-doped ZnO (AZO) thin films by RF magnetron sputtering under different working pressure of 5 - 40 mTorr. Optimization of the prepared thin films shows low resistivity of 6.11 × 10-4 ?-cm, mobility of 4.295 cm2/V-s and carrier concentration of 3.277 × 1020 cm-3 at working pressure of 5 mTorr. The maximum transmittance of 98.99 % for wavelengths above 600 nm and Haacke figure of merit (FOM) are 6.44 × 10-3 ?-1 with working pressure of 5 mTorr. These results indicate that AZO thin films are a promising high conductivity transparent electrode scheme for solar cells and various displays applications.",
author = "Chu, {Chien Hsun} and Wu, {Hung Wei} and Huang, {Jow Lay}",
year = "2014",
month = jan,
day = "1",
doi = "10.1109/IS3C.2014.155",
language = "English",
isbn = "9781479952779",
series = "Proceedings - 2014 International Symposium on Computer, Consumer and Control, IS3C 2014",
publisher = "IEEE Computer Society",
pages = "569--572",
booktitle = "Proceedings - 2014 International Symposium on Computer, Consumer and Control, IS3C 2014",
address = "United States",
note = "2nd International Symposium on Computer, Consumer and Control, IS3C 2014 ; Conference date: 10-06-2014 Through 12-06-2014",
}