Influences of interface roughness scattering on asymmetric and/or steplike current-voltage characteristics of resonant tunneling diodes

Shui Jinn Wang, Jia Chuan Lin, Wan Rone Liou, Mei Ling Yeh, Ying Che Luo, Ching Yuan Cheng

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

The influences of interface roughness (IR) scattering on transmission coefficient and current-voltage (I-V) characteristics of double-barrier resonant tunneling diodes are investigated. Simulation results reveal that asymmetric interface roughness scattering on different interfaces of the heterostructure may result in asymmetric I-V characteristics. In addition, it is suggested that the splitting of subband energy levels inside the quantum well caused by IR with large terraces (≥ 15 nm) may be one of the causes leading to a steplike I-V curve in the negative differential resistance region.

原文English
頁(從 - 到)3858-3862
頁數5
期刊Japanese Journal of Applied Physics
35
發行號7
DOIs
出版狀態Published - 1996 7月

All Science Journal Classification (ASJC) codes

  • 工程 (全部)
  • 物理與天文學 (全部)

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