Influences of surface reconstruction on the atomic-layer-deposited HfO 2 / Al2 O3 /n-InAs metal-oxide-semiconductor capacitors

Hau Yu Lin; San Lein Wu; Chao Ching Cheng; Chih Hsin Ko; Clement H. Wann; You Ru Lin; Shoou Jinn Chang; Tai Bor Wu

doi:10.1063/1.3571293

Influences of surface reconstruction on the atomic-layer-deposited HfO ₂ / Al₂ O₃ /n-InAs metal-oxide-semiconductor capacitors

Hau Yu Lin, San Lein Wu, Chao Ching Cheng, Chih Hsin Ko, Clement H. Wann, You Ru Lin, Shoou Jinn Chang, Tai Bor Wu

微電子工程研究所

研究成果: Article › 同行評審

20 引文斯高帕斯（Scopus）

摘要

We report the characteristics of HfO₂ / Al₂ O ₃ /n-InAs metal-oxide-semiconductor capacitors on different reconstructed surface InAs substrates. The HfO₂ / Al₂ O₃ gate dielectric films deposited on InAs were used to study the interfacial reaction. Compared with (2×4) -surface sample, improvements of capacitance-voltage characteristics for (1×1) -surface sample with lower frequency-dependent capacitance dispersion and higher inversion capacitance are attributed to lower indium composition and less arsenic oxide at Al₂ O₃ /InAs interface, as confirmed by x-ray photoelectron spectroscopy. It indicates that the equivalent dangling bond of cations and anions on (1×1) -surface sample tends to avoid the oxidization process and become less pinning.

原文	English
文章編號	123509
期刊	Applied Physics Letters
卷	98
發行號	12
DOIs	https://doi.org/10.1063/1.3571293
出版狀態	Published - 2011 3月 21

All Science Journal Classification (ASJC) codes

物理與天文學（雜項）

存取文件

10.1063/1.3571293

其它文件與鏈接

引用此

@article{81b1c0465a82443a8b3870d3d0cd3e28,

title = "Influences of surface reconstruction on the atomic-layer-deposited HfO 2 / Al2 O3 /n-InAs metal-oxide-semiconductor capacitors",

abstract = "We report the characteristics of HfO2 / Al2 O 3 /n-InAs metal-oxide-semiconductor capacitors on different reconstructed surface InAs substrates. The HfO2 / Al2 O3 gate dielectric films deposited on InAs were used to study the interfacial reaction. Compared with (2×4) -surface sample, improvements of capacitance-voltage characteristics for (1×1) -surface sample with lower frequency-dependent capacitance dispersion and higher inversion capacitance are attributed to lower indium composition and less arsenic oxide at Al2 O3 /InAs interface, as confirmed by x-ray photoelectron spectroscopy. It indicates that the equivalent dangling bond of cations and anions on (1×1) -surface sample tends to avoid the oxidization process and become less pinning.",

author = "Lin, {Hau Yu} and Wu, {San Lein} and Cheng, {Chao Ching} and Ko, {Chih Hsin} and Wann, {Clement H.} and Lin, {You Ru} and Chang, {Shoou Jinn} and Wu, {Tai Bor}",

note = "Funding Information: This work was supported by National Science Council (NSC) of Taiwan under Contract No. NSC 99-2221-E-230-019. ",

year = "2011",

month = mar,

day = "21",

doi = "10.1063/1.3571293",

language = "English",

volume = "98",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "12",

}

TY - JOUR

T1 - Influences of surface reconstruction on the atomic-layer-deposited HfO 2 / Al2 O3 /n-InAs metal-oxide-semiconductor capacitors

AU - Lin, Hau Yu

AU - Wu, San Lein

AU - Cheng, Chao Ching

AU - Ko, Chih Hsin

AU - Wann, Clement H.

AU - Lin, You Ru

AU - Chang, Shoou Jinn

AU - Wu, Tai Bor

N1 - Funding Information: This work was supported by National Science Council (NSC) of Taiwan under Contract No. NSC 99-2221-E-230-019.

PY - 2011/3/21

Y1 - 2011/3/21

N2 - We report the characteristics of HfO2 / Al2 O 3 /n-InAs metal-oxide-semiconductor capacitors on different reconstructed surface InAs substrates. The HfO2 / Al2 O3 gate dielectric films deposited on InAs were used to study the interfacial reaction. Compared with (2×4) -surface sample, improvements of capacitance-voltage characteristics for (1×1) -surface sample with lower frequency-dependent capacitance dispersion and higher inversion capacitance are attributed to lower indium composition and less arsenic oxide at Al2 O3 /InAs interface, as confirmed by x-ray photoelectron spectroscopy. It indicates that the equivalent dangling bond of cations and anions on (1×1) -surface sample tends to avoid the oxidization process and become less pinning.

AB - We report the characteristics of HfO2 / Al2 O 3 /n-InAs metal-oxide-semiconductor capacitors on different reconstructed surface InAs substrates. The HfO2 / Al2 O3 gate dielectric films deposited on InAs were used to study the interfacial reaction. Compared with (2×4) -surface sample, improvements of capacitance-voltage characteristics for (1×1) -surface sample with lower frequency-dependent capacitance dispersion and higher inversion capacitance are attributed to lower indium composition and less arsenic oxide at Al2 O3 /InAs interface, as confirmed by x-ray photoelectron spectroscopy. It indicates that the equivalent dangling bond of cations and anions on (1×1) -surface sample tends to avoid the oxidization process and become less pinning.

UR - http://www.scopus.com/inward/record.url?scp=79953901359&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79953901359&partnerID=8YFLogxK

U2 - 10.1063/1.3571293

DO - 10.1063/1.3571293

M3 - Article

AN - SCOPUS:79953901359

SN - 0003-6951

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

M1 - 123509

ER -

Influences of surface reconstruction on the atomic-layer-deposited HfO 2 / Al2 O3 /n-InAs metal-oxide-semiconductor capacitors

摘要

All Science Journal Classification (ASJC) codes

存取文件

其它文件與鏈接

指紋

引用此

Influences of surface reconstruction on the atomic-layer-deposited HfO ₂ / Al₂ O₃ /n-InAs metal-oxide-semiconductor capacitors