Influences of the mesa-sidewall effect on Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic transistors

W. L. Chang; H. J. Pan; W. C. Wang; K. B. Thei; W. S. Lour; W. C. Liu

doi:10.1088/0268-1242/14/10/301

Influences of the mesa-sidewall effect on Ga_0.51In_0.49P/In_0.15Ga_0.85As pseudomorphic transistors

W. L. Chang, H. J. Pan, W. C. Wang, K. B. Thei, W. S. Lour, W. C. Liu

微電子工程研究所

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

摘要

The influences of the mesa-sidewall effect on direct current and radio frequency (RF) performances of Ga_0.51In_0.49P/In_0.15Ga_0.85As pseudomorphic HEMT are investigated. The leakage current path and parasitic capacitance induced from mesa-sidewalls seriously affect the device characteristics, including excessive gate leakage current, the reduced breakdown voltage, the degraded RF current gain frequency and the increased sliding effect.

原文	English
頁（從 - 到）	887-891
頁數	5
期刊	Semiconductor Science and Technology
卷	14
發行號	10
DOIs	https://doi.org/10.1088/0268-1242/14/10/301
出版狀態	Published - 1999 10月

All Science Journal Classification (ASJC) codes

電子、光磁材料
凝聚態物理學
電氣與電子工程
材料化學

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10.1088/0268-1242/14/10/301

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abstract = "The influences of the mesa-sidewall effect on direct current and radio frequency (RF) performances of Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic HEMT are investigated. The leakage current path and parasitic capacitance induced from mesa-sidewalls seriously affect the device characteristics, including excessive gate leakage current, the reduced breakdown voltage, the degraded RF current gain frequency and the increased sliding effect.",

author = "Chang, {W. L.} and Pan, {H. J.} and Wang, {W. C.} and Thei, {K. B.} and Lour, {W. S.} and Liu, {W. C.}",

year = "1999",

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doi = "10.1088/0268-1242/14/10/301",

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AU - Chang, W. L.

AU - Pan, H. J.

AU - Wang, W. C.

AU - Thei, K. B.

AU - Lour, W. S.

AU - Liu, W. C.

PY - 1999/10

Y1 - 1999/10

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AB - The influences of the mesa-sidewall effect on direct current and radio frequency (RF) performances of Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic HEMT are investigated. The leakage current path and parasitic capacitance induced from mesa-sidewalls seriously affect the device characteristics, including excessive gate leakage current, the reduced breakdown voltage, the degraded RF current gain frequency and the increased sliding effect.

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Influences of the mesa-sidewall effect on Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic transistors

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Influences of the mesa-sidewall effect on Ga_0.51In_0.49P/In_0.15Ga_0.85As pseudomorphic transistors