A modified p-type Si/SiGe quantum well infrared photodetector for multispectral infrared imaging applications is demonstrated. In order to improve the detector's performances we have used a SiGe emitter and a low-temperature wet passivation process that give rise to a reduced dark current, even at relatively high bias voltages. Multispectral photoresponse at the long, mid and short wavelength infrared atmospheric windows was observed. The response peaks are assigned to the various classes of intervalence band transitions in the quantum wells and in the SiGe emitter layers.
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