InGaAsN metal-semiconductor-metal photodetectors with modulation-doped heterostructures

S. H. Hsu, Y. K. Su, S. J. Chang, W. C. Chen, H. L. Tsai

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

InGaAsN metal-semiconductor-metal (MSM) photodetectors (PDs) with modulation-doped heterostructures have been successfully fabricated. It was found from capacitance-voltage measurements that carriers were well confined. Using thermionic emission theory and measured dark currents, it was found that effective Schottky barrier heights were 0.61, 0.72, 0.50, and 0.23 eV for the MSM-PDs with Al0.2Ga0.8 As cap layer doping Nd= 5 ×1016, 9 × 1016, 2 × 1017, and 6 × 1017 cm-3, respectively. Furthermore, it was found that measured responsivities were 0.02, 0.14, and 0.22 A/W and for the MSM-PDs with Nd= 5 × 1016, 9 × 10 16, and 2 × 1017 cm-3, respectively.

原文English
頁(從 - 到)547-549
頁數3
期刊IEEE Photonics Technology Letters
18
發行號3
DOIs
出版狀態Published - 2006 二月 1

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 電氣與電子工程

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