InGaN-AlInGaN multiquantum-well LEDs

研究成果: Article同行評審

108 引文 斯高帕斯(Scopus)

摘要

InGaN-GaN and InGaN-AlInGaN multiquantum-well (MQW) light-emitting diodes (LEDs) were both fabricated and their optical properties were evaluated by photoluminescence (PL) as well as electroluminescence (EL). We found that the PL peak position of the InGaN-AlInGaN MQW occurs at a much lower wavelength than that of the InGaN-GaN MQW. PL intensity of the InGaN-AlInGaN MQW was also found to be larger. EL intensity of the InGaN-AlInGaN MQW LED was also found to be larger than that of the InGaN-GaN MQW LED under the same amount of injection current. Furthermore, it was found that EL spectrum of the InGaN-AlInGaN MQW LED is less sensitive to the injection current. These observations all suggest that we can improve the properties of nitride-based LEDs by using AlInGaN as the barrier layer.

原文English
頁(從 - 到)559-561
頁數3
期刊IEEE Photonics Technology Letters
13
發行號6
DOIs
出版狀態Published - 2001 六月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 電氣與電子工程

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