InGaN-based epitaxial films as photoelectrodes for hydrogen generation through water photoelectrolysis and CO2 reduction to formic acid

J. K. Sheu, P. H. Liao, T. C. Huang, K. J. Chiang, W. C. Lai, M. L. Lee

研究成果: Article同行評審

19 引文 斯高帕斯(Scopus)

摘要

Hydrogen gas (H2) and formic acid (HCOOH) are simultaneously generated through direct water photoelectrolysis and CO2 reduction, respectively. These processes are demonstrated in this study by using photoelectrochemical (PEC) cells with working electrodes composed of InGaN/GaN epitaxial wafers in CO2-containing NaCl electrolyte. In particular, the electrolyte used in this study is the mixture of NaCl and water, which is an environment friendly aqueous solution rather than the artificial acid or alkaline solution, such as HCl or KOH. The working electrodes composed of double-sided epitaxial wafers, where Si-doped InGaN and GaN layers are separately grown on both surface sides of a sapphire substrate, exhibit higher hydrogen gas production and CO2 reduction rates than the working electrodes consisting of single-sided epitaxial layer. The typical energy conversion efficiency of HCOOH and H2 generated from the double-sided working electrodes without an external bias are estimated as 1.09% and 5.48%, respectively.

原文English
頁(從 - 到)86-90
頁數5
期刊Solar Energy Materials and Solar Cells
166
DOIs
出版狀態Published - 2017 七月 1

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 可再生能源、永續發展與環境
  • 表面、塗料和薄膜

指紋

深入研究「InGaN-based epitaxial films as photoelectrodes for hydrogen generation through water photoelectrolysis and CO<sub>2</sub> reduction to formic acid」主題。共同形成了獨特的指紋。

引用此