InGaN-based epitaxial films as photoelectrodes for hydrogen generation through water photoelectrolysis and CO2 reduction to formic acid

Jinn-Kong Sheu, P. H. Liao, T. C. Huang, K. J. Chiang, Wei-Chi Lai, M. L. Lee

研究成果: Article

16 引文 (Scopus)

摘要

Hydrogen gas (H2) and formic acid (HCOOH) are simultaneously generated through direct water photoelectrolysis and CO2 reduction, respectively. These processes are demonstrated in this study by using photoelectrochemical (PEC) cells with working electrodes composed of InGaN/GaN epitaxial wafers in CO2-containing NaCl electrolyte. In particular, the electrolyte used in this study is the mixture of NaCl and water, which is an environment friendly aqueous solution rather than the artificial acid or alkaline solution, such as HCl or KOH. The working electrodes composed of double-sided epitaxial wafers, where Si-doped InGaN and GaN layers are separately grown on both surface sides of a sapphire substrate, exhibit higher hydrogen gas production and CO2 reduction rates than the working electrodes consisting of single-sided epitaxial layer. The typical energy conversion efficiency of HCOOH and H2 generated from the double-sided working electrodes without an external bias are estimated as 1.09% and 5.48%, respectively.

原文English
頁(從 - 到)86-90
頁數5
期刊Solar Energy Materials and Solar Cells
166
DOIs
出版狀態Published - 2017 七月 1

指紋

formic acid
Epitaxial films
Formic acid
Hydrogen
Electrodes
Water
Electrolytes
Gases
Photoelectrochemical cells
Aluminum Oxide
Epitaxial layers
Energy conversion
Sapphire
Conversion efficiency
Acids
Substrates

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films

引用此文

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title = "InGaN-based epitaxial films as photoelectrodes for hydrogen generation through water photoelectrolysis and CO2 reduction to formic acid",
abstract = "Hydrogen gas (H2) and formic acid (HCOOH) are simultaneously generated through direct water photoelectrolysis and CO2 reduction, respectively. These processes are demonstrated in this study by using photoelectrochemical (PEC) cells with working electrodes composed of InGaN/GaN epitaxial wafers in CO2-containing NaCl electrolyte. In particular, the electrolyte used in this study is the mixture of NaCl and water, which is an environment friendly aqueous solution rather than the artificial acid or alkaline solution, such as HCl or KOH. The working electrodes composed of double-sided epitaxial wafers, where Si-doped InGaN and GaN layers are separately grown on both surface sides of a sapphire substrate, exhibit higher hydrogen gas production and CO2 reduction rates than the working electrodes consisting of single-sided epitaxial layer. The typical energy conversion efficiency of HCOOH and H2 generated from the double-sided working electrodes without an external bias are estimated as 1.09{\%} and 5.48{\%}, respectively.",
author = "Jinn-Kong Sheu and Liao, {P. H.} and Huang, {T. C.} and Chiang, {K. J.} and Wei-Chi Lai and Lee, {M. L.}",
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TY - JOUR

T1 - InGaN-based epitaxial films as photoelectrodes for hydrogen generation through water photoelectrolysis and CO2 reduction to formic acid

AU - Sheu, Jinn-Kong

AU - Liao, P. H.

AU - Huang, T. C.

AU - Chiang, K. J.

AU - Lai, Wei-Chi

AU - Lee, M. L.

PY - 2017/7/1

Y1 - 2017/7/1

N2 - Hydrogen gas (H2) and formic acid (HCOOH) are simultaneously generated through direct water photoelectrolysis and CO2 reduction, respectively. These processes are demonstrated in this study by using photoelectrochemical (PEC) cells with working electrodes composed of InGaN/GaN epitaxial wafers in CO2-containing NaCl electrolyte. In particular, the electrolyte used in this study is the mixture of NaCl and water, which is an environment friendly aqueous solution rather than the artificial acid or alkaline solution, such as HCl or KOH. The working electrodes composed of double-sided epitaxial wafers, where Si-doped InGaN and GaN layers are separately grown on both surface sides of a sapphire substrate, exhibit higher hydrogen gas production and CO2 reduction rates than the working electrodes consisting of single-sided epitaxial layer. The typical energy conversion efficiency of HCOOH and H2 generated from the double-sided working electrodes without an external bias are estimated as 1.09% and 5.48%, respectively.

AB - Hydrogen gas (H2) and formic acid (HCOOH) are simultaneously generated through direct water photoelectrolysis and CO2 reduction, respectively. These processes are demonstrated in this study by using photoelectrochemical (PEC) cells with working electrodes composed of InGaN/GaN epitaxial wafers in CO2-containing NaCl electrolyte. In particular, the electrolyte used in this study is the mixture of NaCl and water, which is an environment friendly aqueous solution rather than the artificial acid or alkaline solution, such as HCl or KOH. The working electrodes composed of double-sided epitaxial wafers, where Si-doped InGaN and GaN layers are separately grown on both surface sides of a sapphire substrate, exhibit higher hydrogen gas production and CO2 reduction rates than the working electrodes consisting of single-sided epitaxial layer. The typical energy conversion efficiency of HCOOH and H2 generated from the double-sided working electrodes without an external bias are estimated as 1.09% and 5.48%, respectively.

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U2 - 10.1016/j.solmat.2017.03.014

DO - 10.1016/j.solmat.2017.03.014

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JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

SN - 0927-0248

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