@article{d3100be5542941a28d626558a5646fca,
title = "InGaN-based light-emitting diodes with an AlGaN staircase electron blocking layer",
abstract = "In this letter, we investigate the external quantum efficiency (EQE) and efficiency droop characteristics of InGaNbased light-emitting diodes (LEDs) incorporating AlxGa1-xN staircase electron blocking layers (EBLs). The LED featuring a composition-stepped EBL (x: 0.21, 0.14, and 0.07) exhibited the highest EQE under low current levels, but a severe efficiency droop at high current levels. In contrast, the LED with a composition-stepped EBL (x: 0.07, 0.14, and 0.21) exhibited a significant improvement in its onset of droop and a mitigated efficiency droop; we ascribe these features to the increased hole injection rate and the decreased built-in electric field.",
author = "Chang, {Shoou Jinn} and Yu, {Sheng Fu} and Lin, {Ray Ming} and Shuguang Li and Chiang, {Tsung Hsun} and Chang, {Sheng Po} and Chen, {Chang Ho}",
note = "Funding Information: Manuscript received May 6, 2012; revised June 24, 2012; accepted August 13, 2012. Date of publication August 16, 2012; date of current version September 12, 2012. This work was supported in part by the Advanced Optoelectronic Technology Center, in part by the Research Center for Energy Technology and Strategy, National Cheng Kung University, under projects from the Ministry of Education, Taiwan, in part by the Bureau of Energy, Ministry of Economic Affairs of Taiwan, under Contract 100-D0204-6, and in part by the National Science Council of Taiwan under Project NSC 99-2221-E-182-040.",
year = "2012",
doi = "10.1109/LPT.2012.2213589",
language = "English",
volume = "24",
pages = "1737--1740",
journal = "IEEE Photonics Technology Letters",
issn = "1041-1135",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "19",
}