InGaN Flip-Chip light-emitting diodes with embedded air voids as light-scattering layer

Yu Hsiang Yeh, Jinn Kong Sheu, Ming Lun Lee, Po Cheng Chen, Yu Chen Yang, Cheng Hsiung Yen, Wei Chih Lai

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)

摘要

The performance of GaN-based flip-chip light-emitting diodes (LEDs) with embedded air voids grown on a selective-area Ar-implanted sapphire (SAS) substrate was demonstrated in this letter. The GaN-based epitaxial layers grown on Ar-implanted regions exhibited lower growth rates compared with those grown on implantation-free regions. Accordingly, air voids formed over the implanted regions after merging laterally grown GaN facet fronts. The light-output power of LEDs grown on SAS was greater than that of LEDs grown on implantation-free sapphire substrates. The output power of LEDs grown on SAS was enhanced by 20% at an injection current of 700 mA. The increase in output power was mainly attributed to the scattering of light around the air voids, which increased the probability of photons escaping from the LEDs.

原文English
文章編號6650115
頁(從 - 到)1542-1544
頁數3
期刊IEEE Electron Device Letters
34
發行號12
DOIs
出版狀態Published - 2013 十二月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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