InGaN-GaN MQW eetal-semiconductor-metal photodiodes with semi-insulating Mg-doped GaN cap layers

C. L. Yu, R. W. Chuang, S. J. Chang, P. C. Chang, K. H. Lee, J. C. Lin

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

InGaN-GaN multiple-quantum-well metal-semiconductor-metal photodiodes (PDs) with in situ grown 40-nm-thick unactivated semi-insulating Mg-doped GaN cap layer were successfully fabricated. The dark leakage current of this PD was comparably much smaller than that of conventional PD without the semi-insulating layer, because of a thicker and higher potential barrier of semi-insulating cap layer, and also a smaller number of surface states involved. For the PDs with the semi-insulating Mg-doped GaN cap layers, the responsivity at 380 nm was 0.372 A/W when biasing at 5 V. In short, incorporating a semi-insulating Mg-doped GaN cap layer into the PDs beneficially leads to the suppression of dark current and a corresponding improvement in the ultraviolet-to-visible rejection ratio.

原文English
頁(從 - 到)846-848
頁數3
期刊IEEE Photonics Technology Letters
19
發行號11
DOIs
出版狀態Published - 2007 六月 1

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 電氣與電子工程

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