InGaN-GaN MQW LEDs with Si treatment

Y. P. Hsu; S. J. Chang; Y. K. Su; S. C. Chen; J. M. Tsai; W. C. Lai; C. H. Kuo; C. S. Chang

doi:10.1109/LPT.2005.851989

InGaN-GaN MQW LEDs with Si treatment

Y. P. Hsu, S. J. Chang, Y. K. Su, S. C. Chen, J. M. Tsai, W. C. Lai, C. H. Kuo, C. S. Chang

研究成果: Article › 同行評審

30 引文斯高帕斯（Scopus）

摘要

Surface morphologies of the metal-organic chemical vapor deposition-grown p-GaN layers with and without Si treatment were investigated by atomic force microscope and scanning electron microscope. It was found that Si treatment resulted in a much rougher sample surface due to the formation of a thin Si_x N_y layer. It was also found that forward voltage of the Si-treated InGaN-GaN light-emitting diode (LED) was slightly higher than that of conventional LED without Si treatment. However, it was also found that such Si treatment could also result in a much larger LED output intensity.

原文	English
頁（從 - 到）	1620-1622
頁數	3
期刊	IEEE Photonics Technology Letters
卷	17
發行號	8
DOIs	https://doi.org/10.1109/LPT.2005.851989
出版狀態	Published - 2005 8月

All Science Journal Classification (ASJC) codes

電子、光磁材料
原子與分子物理與光學
電氣與電子工程

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10.1109/LPT.2005.851989

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title = "InGaN-GaN MQW LEDs with Si treatment",

abstract = "Surface morphologies of the metal-organic chemical vapor deposition-grown p-GaN layers with and without Si treatment were investigated by atomic force microscope and scanning electron microscope. It was found that Si treatment resulted in a much rougher sample surface due to the formation of a thin Six Ny layer. It was also found that forward voltage of the Si-treated InGaN-GaN light-emitting diode (LED) was slightly higher than that of conventional LED without Si treatment. However, it was also found that such Si treatment could also result in a much larger LED output intensity.",

author = "Hsu, {Y. P.} and Chang, {S. J.} and Su, {Y. K.} and Chen, {S. C.} and Tsai, {J. M.} and Lai, {W. C.} and Kuo, {C. H.} and Chang, {C. S.}",

note = "Funding Information: Manuscript received November 29, 2004; revised April 2, 2005. This work was supported by the National Science Council under Contract NSC-89-2215-E-006-095.",

year = "2005",

month = aug,

doi = "10.1109/LPT.2005.851989",

language = "English",

volume = "17",

pages = "1620--1622",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - InGaN-GaN MQW LEDs with Si treatment

AU - Hsu, Y. P.

AU - Chang, S. J.

AU - Su, Y. K.

AU - Chen, S. C.

AU - Tsai, J. M.

AU - Lai, W. C.

AU - Kuo, C. H.

AU - Chang, C. S.

N1 - Funding Information: Manuscript received November 29, 2004; revised April 2, 2005. This work was supported by the National Science Council under Contract NSC-89-2215-E-006-095.

PY - 2005/8

Y1 - 2005/8

N2 - Surface morphologies of the metal-organic chemical vapor deposition-grown p-GaN layers with and without Si treatment were investigated by atomic force microscope and scanning electron microscope. It was found that Si treatment resulted in a much rougher sample surface due to the formation of a thin Six Ny layer. It was also found that forward voltage of the Si-treated InGaN-GaN light-emitting diode (LED) was slightly higher than that of conventional LED without Si treatment. However, it was also found that such Si treatment could also result in a much larger LED output intensity.

AB - Surface morphologies of the metal-organic chemical vapor deposition-grown p-GaN layers with and without Si treatment were investigated by atomic force microscope and scanning electron microscope. It was found that Si treatment resulted in a much rougher sample surface due to the formation of a thin Six Ny layer. It was also found that forward voltage of the Si-treated InGaN-GaN light-emitting diode (LED) was slightly higher than that of conventional LED without Si treatment. However, it was also found that such Si treatment could also result in a much larger LED output intensity.

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JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 8

ER -

InGaN-GaN MQW LEDs with Si treatment

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