InGaN-GaN multiquantum-well blue and green light-emitting diodes

S. J. Chang, W. C. Lai, Y. K. Su, J. F. Chen, C. H. Liu, U. H. Liaw

研究成果: Article同行評審

258 引文 斯高帕斯(Scopus)

摘要

InGaN-GaN multiquantum-well (MQW) blue and green light-emitting diodes (LEDs) were prepared by organometallic vapor phase epitaxy, and the properties of these LEDs were evaluated by photoluminescence (PL), double crystal X-ray diffraction, and electroluminescence (EL) measurements. It was found that there were only small shifts observed in PL and EL peak positions of the blue MQW LEDs when the number of quantum well (QW) increased. However, significant shifts in PL and EL peak positions were observed in green MQW LEDs when the number of QW increased. It was also found that there was a large blue shift in EL peak position under high current injection in blue MQW LEDs. However, the blue shift in green MQW LEDs was negligibly small when the injection current was large. These observations could all be attributed to the rapid relaxation in green MQW LEDs since the In composition ratio in the InGaN well was high for the green MQW LEDs. The forward voltage Vf of green MQW LEDs was also found to be larger than that of blue MQW LDDs due to the same reason.

原文English
頁(從 - 到)278-283
頁數6
期刊IEEE Journal on Selected Topics in Quantum Electronics
8
發行號2
DOIs
出版狀態Published - 2002 三月

All Science Journal Classification (ASJC) codes

  • 原子與分子物理與光學
  • 電氣與電子工程

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