InGaN light-emitting diodes with naturally formed truncated micropyramids on top surface

GaN-based light-emitting diodes (LEDs) with truncated micropyramids surfaces performed by metalorganic chemical vapor deposition were demonstrated. In this study, a growth-interruption step and an Mg-treatment process were simultaneously performed to create multiple truncated micropyramids on LED surface. Experimental results indicated that GaN-based LEDs with the truncated micropyramids on the top surface demonstrate improved external efficiency of around 60% at 20 mA. It is worth noting that the typical 20 mA driven forward voltage is only 0.15 V higher than that of conventional LEDs (LEDs with specular surface).