InGaN light-emitting diodes with naturally formed truncated micropyramids on top surface

J. K. Sheu, C. M. Tsai, M. L. Lee, S. C. Shei, W. C. Lai

研究成果: Article同行評審

48 引文 斯高帕斯(Scopus)

摘要

GaN-based light-emitting diodes (LEDs) with truncated micropyramids surfaces performed by metalorganic chemical vapor deposition were demonstrated. In this study, a growth-interruption step and an Mg-treatment process were simultaneously performed to create multiple truncated micropyramids on LED surface. Experimental results indicated that GaN-based LEDs with the truncated micropyramids on the top surface demonstrate improved external efficiency of around 60% at 20 mA. It is worth noting that the typical 20 mA driven forward voltage is only 0.15 V higher than that of conventional LEDs (LEDs with specular surface).

原文English
文章編號113505
期刊Applied Physics Letters
88
發行號11
DOIs
出版狀態Published - 2006

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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