InGaN light-emitting diodes with oblique sidewall facets formed by selective growth on SiO2 patterned GaN film

Jinn Kong Sheu, Kuo Hua Chang, Shang Ju Tu, Ming Lun Lee, Chih Ciao Yang, Che Kang Hsu, Wei Chih Lai

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

In this study, GaN-based light-emitting diodes (LEDs) with naturally formed oblique sidewall facets (OSFs) were fabricated through a selective regrowth process. The SiO2 mask layer was patterned on a heavily doped n-GaN template layer rather than on a sapphire substrate. As a result, the periphery of the LED included several OSFs around the regrown GaN mesa. While processing the device, dry etching was unnecessary for exposing the n-GaN underlying layer in order to form the n-type Ohmic contacts. This could be attributed to the fact that the n-GaN template layer with an electron concentration of around 8 × 1018/cm3 was exposed after the removal of the SiO2 mask layer. With an injection current of 20 mA, GaN-based LEDs with OSFs exhibited a 21% enhancement in light output compared with those that have vertical sidewall facets. The enhancement is attributed to the fact that photons extracted from OSFs can reduce internal absorption loss.

原文English
頁(從 - 到)A562-A567
期刊Optics Express
18
發行號104
DOIs
出版狀態Published - 2010 十一月 8

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

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